2N5441 ETC1

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3875081 GE SOLID STA C25

Tepe tS. SOUR STATE. O1E 17747, Dp 25-17 2N5441-2N5446, T6420 Series File Number 593 TERMINAL DESIGNATIONS 40-A Silicon Triacs a Features: wn ® & wr hs ose = di/dt capability = 100 A/us il) PRowe hi = Low switching losses as pe = Low on-state voltage at high current levels ees) fl 4 ait = Low thermal resistance Chars a A wseae Crt (2N5441-43, = 200 400V 600V = Types Types Types SS cama | Press-rit | ansaat_ | anseaz | ansaaa_ | carwooe AP [sua | anstea | anseas | ans i. Isolated-Stud te420B_| Te4200 | T6420M (OE Ce RCA triacs are gate-controlled, full-wave silicon ac switches. = They are designed to switch from an off-state to an on-state fe==t~ ANODE for either polarity of applied voltage with positive or = : negative gate-triggering voltages. were (2N5444-46 For Operation with Sinusoidal Supply Voltage at Frequencies up to 50/60 Hz and with resistive or Inductive Load ‘2NS441 ‘QN5442, ‘2N5443, +2N5444 ‘2N5445, (2N5446 * REPETITIVE PEAK OFF-STATE VOLTAGE ®, Vorou ‘Te4208 ‘Teq20D Teszom Gate Open, Ts =-65 0 100°C ..ssesrererecsrscenseeeesenseeesenees 200 400 600 v RMS ON-STATE CURRENT (Conduction angle = 360°C), trawe Case temperature it PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT, Irew | For one cycle of applied principal voltage CL.) ee A RATE OF CHANGE OF ON-STATE CURRENT, di/dt FUSING CURRENT (for Triac Protection), Ft t * PEAK GATE-TRIGGER CURRENT &, lor FOr 1 US MAK. oo s.seseeseecesceecsecteceeseseee eee eeeeeneewe eee eee ee 12 A * GATE POWER DISSIPATION Average, Poiavi .+..ssecceeceecscceccseeeeeneeseesseseeeeeseeen ens ee 8 O76 w * TEMPERATURE RANGE 4 Storage, Tag -c.cseesecsecceeceecsecseteeeeeceeeeneeeeeeeseeenees 88 to 150 °c : * TERMINAL TEMPERATURE (During Soldering), Tr STUD TORQUE, rs. * In accordance with JEDEC registration data format (JS-14, RDF2) filed for the JEDEC (2N-Series) types. © For either polarity of main terminal 2 voltage (Vura) with reference to main terminal 1. I | For either polarity of gate voltage (Va) with reference to main terminal 1. i A For temperature measurement reference point, see Dimensional Outline \\ 754 | . 1290 An.

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2N5441-2N5446, T6420 Serles

ELECTRICAL CHARACTERISTICS

At Maximum Ratings Unies Otherwise Specified and at Indicated Case Temperature (Tc) FOR ALL TYPES chaactenistic svMBot UNLESS OTHERWISE i SPECIFIED \\ | min [res [Max | | Peak Off-State Current:® Gate open, Ty = 110°C, Vopon © Max. rated value... ‘Maximum On-State Voltage:# For i © 100A (peok), Te = 25°C seeeceeneeseesres Foriy = 56 A (peak), To = 26°C eevcseseeseersreees v™ v DC Holding Current:® ‘Gate open, Initial principal current = 600 mA (de), vp = 12V: Te = EC ceseeecesecneerseesetsntesessaenes - B 60 TG = 68° Cs ec scsceeeeeceeenenenseerersesees - - 100" Critical Rete of Rise of Commutation Voitage:® Forvy = Vononttripaas) = 40 A commuting Gat” = 2E Note guts unerorgiznd, (See Fig 1): Te = 70°C (Pressit types). eeeesseseeeeeeeeees = GEC (Stud types)... eee eee e ere eeeeee eee eee dv/dt vis = GO°C (Isolated-stud types)... ++ eee ee eer eeeee Critical Rate of Rise of Off-State Voltage:® Fore = Vonromexoonenti!voltege rt, gate open, Te = 0G: -2N5441, 2N5444, T6420B. os eeeeceeeeseserveee 200 aNSAdy BNeaas, Teag0Drsssessessecsescosesss ute 700 vine QNB443, 2NB446, T6S20M cs seseeeeeeeeereners 100 DC Gate-Trigger Current:** == Mode Vyt2 VG “ For vp = 12V (de) 1 positive positive 15 80 Rima wi Fegatve — eoative » | Tho ae Tz ponte negative » | 8 11 negative positive 40 80 . ‘ot a Mode Vmt2 Vo i For vp = 12V (de) 1* positive positive - - 125° i iba Wie regative ogatve ZL rt] tas

1 Te = 68°C 1 positive negative - - 240"

; Wt negative positive - - 240° For other cave tanperatnes sevvssssorrensssereneees® Seo Figs.788 DC Gate-Triggor Voltage:** For vp = 12V (del, Ry = 309, Te = WES cereecereceeneersteeeesnereasees - 1.35 25 Forvp = Vopom/ Ry = 1258,T¢ "110 vs e-seee 02 - - Gate Contoted Tarn-On Tine! ; {Detay Timo Rio Tie) Forv = Vonows tar = 200mA, t; = 0.1 1s, i iy = GOA (peak), To = 26°C (S00 Figs. 108 14) «02.6.6 toe “Tarmel Resianes dunelionto-Cas! ‘Steady-State jp eccvdunge wih JEDEC vgvaton data format U814, RDF 2 id forthe JEDEC (20 Seria) toe

4 Foraimor potty of main termina 2 votege (Uy) th ference foal tominal

¢ For either polarity of gate voltage (Vg) with reference to main terminal 1. H — a | 1291 An12.

G E SOLID STATE — CE Em i | 3875081 G E SOLID STATE - o1e 17749 «0 7-25-17 Trace 2N5441-2N5446, T6420 Series ouger B22 eeoS sss AL ect Pe ee ee eee “7 |B a. Oo | ae fe : om ) “ESSE ae \\ rf [tenon ¢ SES fee ne eusanant ovr stare ji 2 Se eeeees| wnt Co. i i= ruc. -ceue mas ov-starecunnent{trimsl— Fig. 1 - Principal voltage-current characteristic. Fig. 2 - Power dissipation vs, on-state current. ease. Teurcaavuse weasuseo as HTH La TI OSsdEciEvdL adi ed aUTasnaidtatssigassc gs haze BCS paste ore ome fa) BE ee ome ‘mat cn oP ES ears | Fig, 3 - Maximum allowable case temperature vs. on-state current. Fig, 4 - Peak surge on-state current vs. surge ourrent duration. _ i 1 Hee ey Oe PA SnsSa ay Sea on ee By as Ste eee | ee LH oo eee Pi i | Hi ee ee eT PSE ee ee 2 eee as En SSH a Yay Sea ES SS se sesso 756 SS .1292 A-13

G E SOLID STATE 01 Def) 3a7s082 oo177so 3 : . ee _ | 3875081 G E SOLID STATE o1e 17750 Dd T2S7I7 Triacs 2N5441-2N5446, T6420 Serles 3 eee ee gehen Sess se oa ee oe So 70-00 0 rtmarune irel—ee Tee ee Tareane ee . ; Fig. 7-DC gate-trigger current vs. case temperature we Fig. 8 - DC gate-trigger current vs. case temperature (I & Ii int modes). modes) PSS SS Secale iain Pamlasdeaiteen catsesteniead tessssatteitaireay| 4 = Pamir eet dsdtsteret eeraenaceesteeeetttat . alae soa Ray eeare-Tamnh MRENT Work ea yy v EHC ait iu a Ce CE ea nal . ay Cee ' Fe mn 8) a ; Ps a . Fe ces H EH A oF Fig. 11 - Transient Junction-to-case thermal reistance vs. time for press-fit and stud types. a ‘757

1293 A-14

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3875081 G E SOLID STATE

rriace o1e 17751 p T725717 2N5441-2N5446, T6420 Series = 1 -f--4---\\- = --7/- foot 1 ; 2 a \\ \\ / \\ [esas jews { h at se. \\ i we Sy wa"! 1 awe J s2is-2409R5 Fig, 12 - Rate of change of on-state current with time (defining Fig. 13 - Relationship between supply voltage and principal current difat). (inductive load) showing reference points for definition of commutating voltage (dv/dt). i] 90% POINT i } we t 1 ! an . li roan I i { i H i | TT ron 7 \\ pte ry : ob Ae Fig. 14 - Relationship between off-state voltage, on-state current, and gate-trigger voltage showing reference points for definition of turn-on time (tz). i : 758 oe | "1294 8-01