T6401 ETC

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

: ee : Press 4 G E SOLID STATE O2 deff 3a7soai O017823 2S7. T6401, T6411, T6421 Series File Number 459 30-A Silicon Triacs TERMINAL DESIGNATIONS For Power-Switching and Power Control wn Features: Spon De care 800V, 125 Dag. C T, Operating Hu 4 = High dvidt and ai/dt Capability wn f —HH pi} & Low Switching Losses Ih frome C1 Gee ‘High Pulse Current Capability * - =a = Low Forward and Reverse Leakage Fates (T_T) eae) ™ Sipos Oxide Glass Multilayer Passivation System tan pad § Advanced Unisurlace Construction “eae = ' Precise lon Implanted Dillusion Source w=} PRESS-FIT TYPES STUD TYPES ISOLATED-STUD TYPES: . ‘T6401 SERIES ‘T6411 SERIES 16421 SERIES These RCA triacs are gate-controlled full-wave silicon ac tions such as heating controls, motor controls, arc-welding switches. They are designed to switch from an off-state to an equipment, light dimmers, and power switching systems. on-state for either polarity of applied voltage with positive or They can also be used in air-conditioning and photocopy- negative gate triggering voltages. ing equipment. ' These triacs are intended for control of ac loads in applica- Te1018 —Te4010—TedO1M—TSAOIN ; Tenis TeettD —TeatIM eatin years | TeaziD Team REPETITIVE PEAK OFF-STATE VOLTAGE:* Gai ODEN, Tye SOIT Von es eee seesseteseess— Vonou 200 400 600 00 v RMS ON-STATE CURRENT (Conduction angle = 360°); = BO°C (Isolated-stud types)... ss ceeeereceeneeee ee A PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: trom or one oyete of applied principal voltage GO HZ (SINUSOIDal) 6.2... ccc eeee eee eneneereeeenenes (00 A For more then one eycle of applied principal vollage «. ig RATE-OF-CHANGE OF ON-STATE CURRENT: vet Vou Venous tor * 200 mA t,0.1 yo (S00 FQ. 19) «sees 009 es FUSING CURRENT (lor tac protection) “Fye s4D 10 100°C, (= 12510 10 ms vrs ceeeseseevseees ry PEAK GATE-TRIGGER CURRENT:® Norm GATE POWER DISSIPATION: PEAK (For ts max. loqy<4A,Se0FIQ.7) ceeseeseeese Pog egw AVERAGE oes cceerucseecsvereeestecsurccueseness Pou |= 0.75 —__ w TEMPERATURE RANGE:4 ‘TERMINAL TEMPERATURE (Ouring soldering): Tr STUD TORQUE: Maximum (OO NOTEXGEEO) 12S —_—— si *For either polarity of main terminat 2 voltage (Viur2) with reference to main terminal 1. "For either polarity to gate voltage (Vg) with reference to main terminal 1. AFor temperature measurement reference point, see Dimensional Outline. 830 _ SS 1366 6-03

3875081 G E SOLID STATE g1 Dep) 3a750a1 oowaey ts JF 72 25-/S

76401, T6411, T6421 Series ELECTRICAL CHARACTERISTICS, At Maximum Ratings Unless Otherwise Specified, and at Indicated Temperature LIMITS . . For All Types CHARACTERISTIC SYMBOL Unless Otherwise Spocified Peak Off-State Current:* Gate open, T,= 125°C. Vorou * Max. rated value lorom Maximum On-State Voltage:* For ir= 100 A (peak), To= 25°C oc. ececeesecseeeesteeeee Vw v DC Holding Current:* Gate open, Initial principal current = 150 mA (DC), vo = 12V: Critical Rate-of-Rise of Commutation Voltage:* For Vo= Vorow Irns)= 30 A, commutating di/dt_ = 16 A/ms, gate unenergized (See Fig. 14): To * 90°C (Press-fit tyP@S) oo... eee eee eceee een en ee = 85°C (Stud types)... 2. eee cscccseeeeenseeeseeeee, dv/dt Vips Critical Rate-of-Rise of Off-State Voltage:* For Vo = Voniom. exponential voltage rise, gate open, Te = 125°C: T6401B, T6411B, T6421B oo... eee ee ees ec eee eeeeeeeee 40 200 T6401D, T6411D, TE421D «2... ee ec eeeeeeesetneeeewee dv/dt 25 160 Vis T6401M, TEAT1M, T6421M oo. c ee ccccseeueceee eee en ee 20 100 DC Gate-Trigger Current;*® Mode Vue Vo For Vo= 12 V (DC), r positive Positive - 18 50 RL= 300, ur negative negative - 20 50 . To= 25°C r positive negative lor ~ 30 80 mA mt negative positive - 40 80 DC Gate-Trigger Voltage:** For Vp = 12 V(DC), R, = 30, For Vo = Vorom, Ai = 125 2, Te = 100°C 0.2 = = Gate-Controlled Turn-On Time: (Delay Time = Rise Time) For Vo = Venom lar = 200 mA, t, = 0.1 ys, ‘Thermal Resistance, Junction-to-Case: Steady-State SUD oe. eesecceeeeenesseteceeetesnseeeesccnsnsacemes Rac - - 09 ow Thermal Resistance, Junction-to-Hex (Stud, See Dim. Outline): “For either polarity of main terminal 2 voltage (Visr2) with reference to main terminal 1. . "For either polarity of gate voltage (Vc) with reference to main terminal 1 gat 1367 6-04

3875081 G E SOLID STATE | 1a mE IRS

et Ol DEM 3875081 Oo1r7ees T2578 T6401, T6411, T6421 Series fonornestarive onmouerwe fa) P&C]fPar ¥ et — AH go{ OMDUETION ANGLE « 360" il / we aii [bri RTE TREE “oa cr z

7 RUS RHRHeRATERRHEH] © eet CO OT

: eeaee ELE EEEEERLEEY ae aneEEEE Py 80 7 ee Ee tte fee ee es Ge roucotece nue suratste aroor” [zine - rue en arpucavon SF nena ronen Past —steoes vee Fig. 1 — Powor essipaion va on-state curest Fig, 2 Transian! unelonto-as themal resistance ono nesiive & [Spe rewrennanacine IE tant ne AA TT EAC sag resserstsstsstssrersetese . ieee SST ESE tne | FERRET pee BS N Pesta A SEAS SIS be FEHR Hitt enees or oeerat Tee doo} fee! geen ! Brose Hee resto = eg | USS) FS ge LTT Tes TSN Poy seas esaseuesceseszssesvscossenssrsetezsises Mma of 0 00 1 QT baa cuurnveredvovevievstsitstascetcteatatststtz: Mmmm gee Mame Om 8001 OE : 3 30 a0 i: SURGE CURRENT DURATION—FULL CYCLES 9258-36182 Fig. 3 — Maximum ellowable case temperature vs, on-state Fig. 4 — Peak surge on-state current vs, surge current current. duration. coHRBEH TET RSH EAR MENTE J oof HHRE RT RHRHTIUUEHSS HEHEHE Be HRT EERAT EEL CAN SATB RHE eg a a ge Brrliai ere RHR OMT Et Fe eg SE SERE ERE eg ete ee EEE eee ° oF CANES 18 ne VeTAOE 3 =10 =60 80-40-30 -20 =10 0 10 20 3040 INSTANTANEOUS ON-STATE VOLTAOE {yq]—¥ Gage TeuPeRaTOne (Te}—=*c Wposrtive on weearive) sns-s00 sacs-ismom 832 . ny

1368 G-05

: 3875081 GE SOLID STATE == ”—~—CS~SE At BAGB «OCD TEVS IS G E SOLID STATE - OL Def} aa7soa1 oo17a2b O Pf tHacs 76401, T6411, T6421 Series ~ FREER aie acugez HE aes ear eee EEE EEE 7 : PRB ccasssem sCasoecscseestssceesssccsceeet ered] J ool SHES ELISE HHL . eam HittHTHERT A CeetEEEEEReataaaTTTTTa 2 UFPTPTEE ERM i LET : Pie face vctssdveescesesaenncs Cesacteetaerceneess| cof REESE EULER INCa CRT ‘ Sam SEI Oa Be sere ra rea aEaesee ea taacnaiteeateaa 8 Ene ScEaGadesceraed saatacetacezsatesteasersceny ft ope TERMOGe RETIRE! (0¢ GATE-TRIOGER CURRENT (Ior!—ma OO OO ae ae 2, 0 40 . ‘and ill modes),

7 OEE Ee ES) Eg UE NU a HE

: Boodle NE eee HTT Mt femmes aE MR ee eae eae aa aaa a ‘ Sf RES 0 ae HPERATURE Mg)" hae renpenaTune re)" . ‘9205-18201 . s2cs-i9z02n Fig. 9— oe amke-tiopee ‘currant vs. case temperature (1~ Fig. 10 — DC gate-trigger voltage vs. case temperature, oe ? qe Ld [thar NP Vesnt f i 7 [ne | Rane | Re | q y, sti fi [fae teen Fo) om | [8 | nme Ee fe ee control and universakmotor speed control. “pla lo fr lene dining eet, ses

1369 G-06

3875081 G E SOLID STATE 8 1782? 1 Tos" 1S iriacs T6401, T6411, T6421 Series watt iH 90% POINT rit t ao | dete ey rr ole eee -- ' rt 1 11 i ut IF / Tt ' ! ia 90% Pow bu os . 1 ‘iw — o-b4-_- 4-4 _-- ia rout te bat Toh wi 1 edt [i I H vi ne oe "or in [_sEox rom sen noes o-L acer NL weeoun Fig. 12 ~ Relationship between olt-state voltage, Fig. 13 ~ Rate of change of on-state current on-state current, and gate-trigger voltage with time (delining di/dt). showing reference points for definition of turn-on time (ty) ! 1 MOUNTING CONSIDERATIONS 1 i Mounting of press-fit package types depends upon an wtrae I ' / interference fit between the thyristor case and the heat sink. wo f--4---\\---p--5/- As the thyristor is forced into the heat-sink hole, metal from / t i the heat sink flows into the knurl voids of the thyristor case. / 1 1 i The resultant close contact between the heat sink and the | tCeuuutarine thyristor case assures low thermal and electrical resistances. 1 , ‘A recommended mounting method shows press-fit knurl oa | ! and heat-sink hole dimensions. If these dimensions are ‘CURRENT 1 1 maintained, a “worst-case” condition of 0.0085 in. (0.2159 aaa cones) Wane mm) interference fit will allow press-fit insertion below the H i maximum allowable insertion force of 800 pounds. A slight ‘. | couwuta | . chamfer in the heat-sink hole will help center and guide the “ 1aemnme | oF press-fit package properly into the heat sink. The insertion . ! 1 tool should be a hollow shaft having an inner diameter of wea 1 1 0.500 in. (12.70 mm). These dimensions provide sufficient . a 1 4 _—~ clearance for the leads and assure that no direct force will re | 1 bbe applied to the glass seal of the thyristor. Ta sTATING ' een hear) 1 The press-fit package Is not restricted to a single I T NaUs-240RRs mounting arrangement; direct soldering and the use of ‘epoxy adhesives have been successfully employed. The 1 14 — Relati press-fit case is tin-plated to facilitate direct soldering to the bi aaadembine paronkcpeiieir) cv faea no heat sink. A 60-40 solder should be used and heat should showing reference points for definition be applied only long enough to allow the solder to flow of commutating voltage (dv/dt). frooly. . 834 |

1370 G-07