T4700 ETC1
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Technical content
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File Number 300 T4700 Series 15-Ampere Silicon Triacs For Phase-Control and Load-Switching Applications Feeluress TERMINAL DESIGNATIONS @ 800V, 125 Deg. C T, Operating @ High dv/at and di/dt Capability = Low Switching Losses A wipes ® High Pulse Current Capability ™ Low Forward and Reverse Leakage ©
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® Advanced Unisurface Construction 3) ® Precise fon Implanted Diffusion Source on JEDEC TO-213AA The RCA T4700 Series are gate-controlled full-wave ac sil- icon switches. They are designed to switch from an off-state to a conducting state for either polarity of applied voltage with positive or negative gate triggering. These devices are intended for the control of ac loads in applications such as space heater, oven and furnace con- trols, motor controls, and lamp loads. ‘47008 ‘T4700D ‘T4700M ‘TA7OON REPETITIVE PEAK OFF-STATE VOLTAGE Gate Open ....eceeeeeeeeeeeeeeeseeeereeereraeees — VoROM 200 400 600, 800 v . MS ON-STATE CURRENT: PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT: ‘sm | For one ul eycoofapolied principal vllage For one full cycle of applied principal voltage (5O-Hz, SIMUSOIGAl) «16.66 e ce eeeee cece eeeeee ee eens ————————— 5 A | PEAK GATE-TRIGGER CURRENT: FOr 1 pS MAX. oe cece esceeeeeeeecteeeeseewesees lone 4 A i FUSING CURRENT (for triac protection): Ty -40 to 100°C, t= 1.251010 MS... ce eseeeeeeeeeeee [A —— 0 As GATE POWER DISSIPATION: Peak® (for 1 ws max. and Iqrm=S4A) -..cceeeeeeeeeees Pow —_—__ 6 ___ Ww ‘Average (averaging time = 10 MS Max.) ...seeeecseseees Para 05 TEMPERATURE RANGE: i PIN TEMPERATURE (During soldering): At distances = 1/32 in. (0.8 mm) from ‘seating plane for 10s max. Te ee 2G ie | "For either polarity of main terminal 2 voltage (Vi4r2) with reference to main terminal 1. *For either polarity of gate voltage (Va) with reference to main terminal 1. ‘For temperature measurement reference point, see Dimensional Outline. i | i i 1357 F-08 . 1 a .
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ELECTRICAL CHARACTERISTICS
‘At Maximum Ratings and at indicated Case Temperature (T) Unless Otherwise Specified For All Types : CHARACTERISTIC SYMBOL | Unless Otherwise Specified i [min. [typ | Max._| : Peak Off-State Current® Gate open, T, = 125°C, Vonom * Max. rated value Instantaneous On-State Voltage® For iy = 30A (peak), Tc 25°C ...--seeeeeesesseereeeeenes Vv DC Holding Current® Gate open, Initial principal current = 150 mA (DC), vp = 12V: T= 25°C vecssecssvscsceesscseneeseeeeerscssnesssees - 16 | 60 Critical Rate of Applied Commutating Voltage* For Vo = Vorous hrs) = 15 A, commutating di/at =8 Alms, and gate unenergized Critical Rate of Rise of Off-State Voltage® For Vo = Vorow exponential voltage rise, and gate open At Te = 125°C TATOOB ..sesececesceseeseeeeteeneeneeseess 30 150 TATOOM lieesscccssesseseeseesseseeeeeeens ouat 16 5 Vie TATOON oeesceseeseeseeeeneenseneeseenees 10 50 DC Gate-Trigger Current® For Vp = 6 volts (de), R, = 12 ohms, ‘T, = +25°, and Specified Triggering Mode: Ii Mode: —_Vyzis negative, Va is negative ....-++-+++++ - 15 30 if DC Gate-Trigger Voltage® ‘ For Vp = 6 volts (de) and R, = 12 ohms t For Vo = Vorom Ri = 1252, To = 125°C 02 — - i Gate-Controlled Turn-On Time ! (Delay Time + Rise Time) . FOr Vp = Vonom: Io = 160 mA, t, = 0.1 48, ig =2BA (Deak), To= 25°C vsseseeesensesenererecrereees 25 “Thermal Resistance: SUNCHION-tO-CASE 22... cecseceeeeeeseeeeeennneeeeesee eee “cw For either polarity of main terminal 2 voltage (V2) with reference to main terminal 1. . For either polarity of gate voltage (Vg) with reference to main terminal 1. : 22 j 1358 F-09
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8 MESS . Fea a Siocrmedmot Gendt N R Fig. 1 — Power dissipation curve. Fig. 2— Conduction rating chart (case temperatura). es ce-stave cunnens Jaga [Tt se es ee pees HY A Hae Se Ssee Bt ETT Tie arses Plone Ec Loa (fea eeee IsT“K T_T way A E eo 7 pres ee ESS See | foes de PSE) eer Bt es 6s 7a eee BCH pe TAAL | 1 eS a = 38 AA sSse a a A =" ba i el AP le a EO BA EET TS Bo Fl i 0d A ss SE dT a, > aes Sees : Fig. 3 — Surge current rating chart. Fig. 4 — On-stato characteristics for either direction of principal current. : j== Ce | ee coronene awe aot OT - direction of principal current. ! a j 1359 F-10
G E SOLID STATE 02 deff 3875082 oor7a12 4 r 3875081 G E SOLID STATE _ O1E 17817. DT=2S/5 Trace T4700 Series vest ota Atm Fig. 7 — DC gate-trigger current characteristics for I~ and Ilt+ modes. Fig, 8 — Waveshapes of ty characteristics test. a ET FRET Tne : ' i serereMTRE “ H | . ‘ it : Fig. 9— DC gate-trigger currant cherectoristcs for I* end I~ WERE | conan modes. ' r Fig. 10 — Waveshapes of commutating dv/dt characteristics. i BSceces.. Fe CASE TEMPERATURE TQI—"C ans | . . Fig. 11 ~ DC gate-trigger voltage characteristics. \\ 624 fe | 1360 Fell