T435-800B ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 3
Technical content
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FEATURES
- Providing HighCommutation Performance
- SMD
APPLICATIONS
- UniversalMotors
- Electrovalves ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM RepetitivePeakOff-stateVoltage 800 V VRRM RepetitivePeakOff-stateVoltage 800 V IT(RMS) NonRepetitiveSurgePeakOn-stateCurrent(fullsinewave,TC=110°C) 4 A ITSM Non-repetitive Peak On-state Current (fullcycle) f=50Hz,t=20ms 30 A f=60Hz,t=16.7ms 31 I2t I2tValueforFusing,tp=10ms 5.1 A2S di/dt CriticalRateofRiseon-StateCurrent,f=120Hz,Tj=125℃ 50 A/us PG(AV) AverageGatePowerDissipation,Tj=125℃ 1 W TJ Max.OperatingJunctionTemperature 125 ℃ Tstg StorageTemperature -40~125 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.6 ℃/W T1T2 G G
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MAX UNIT IRRM Repetitivepeakreversecurrent VR=VRRM,TJ=25℃ 5.0 uA IDRM Repetitivepeakoff-statecurrent VD=VDRM,TJ=25℃ 5.0 uA IGT Gatetriggercurrent Ⅰ-Ⅱ-Ⅲ VD=12V,RL=30Ω 35 mA VGT Gatetriggervoltageall quadrant Ⅰ-Ⅱ-Ⅲ VD=12V,RL=30Ω 1.3 V VGD Non-triggeringGate Voltage Ⅰ-Ⅱ-Ⅲ VD=VDRM,RL=33kΩ 0.2 V VTM On-statevoltage IT=5.5A,tp=380us 1.6 V dv/dt CriticalRateofRiseon-StateVolatge VD=67%VDRM,GateOpen,TJ=125℃ 400 V/us IH Holdingcurrent IT=100mA 35 mA IL Latchingcurrent Ⅰ-Ⅲ IG=1.2×IGT mA Ⅱ 60 PACKAGEOUTLINE Dimensionsinmm
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