T30 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor T30
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= 300V(Min)
- High DC Current Gain- : hFE= 1000( Min.) @(IC= 3A, VCE= 2V)
- Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA)
APPLICATIONS
- Switching for dynamotor excitation.
- Audio ,regulator and general purpose. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Darlington Power Transistor T30
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I C= 30mA; IB= 0 300 V V(BR)CBO Collector-Base Breakdown Voltage I C= 1mA; IE= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage I C= 6A; IB= 6mA 2.5 V VBE(sat) Base-Emitter Saturation Voltage I C= 6A; IB= 6mA 3.0 V ICBO Collector Cutoff Current V CB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current V EB= 5V; IC= 0 100 μA hFE DC Current Gain I C= 3A; VCE= 2V 1000