T2700 ETC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
G E SOLID STATE 01 DE—P 3875081 0017805 2 I . 081 GE SOLID ~ T- ~ ge7s0ei GE SOLIOSTATE. OE 17808 OT 25-8 T2700 Series File Number 351 er i High Voltage, 6-A Silicon Triacs ‘TERMINAL DESIGNATIONS | For Power-Control and Power-Switching Applications ure Prd Features: (riper ™ 800V, 125 Deg. C T, Operating © § High dv/at and di/dt Capability = Low Switching Losses ® ™ High Pulse Current Capability = Low Forward and Reverse Leakage ate
1 Sipos Oxide Glass Multilayer Passivation System aee-aris
§ Advanced Unisurlace Construction '& Precise lon Implanted Diffusion Source JEDEC TO-213AA H RCA T2700-series devices are gate controlled full-wave sil- positive or negative triggering voltages to the gate. icon triacs. They are intended for the control of ac loads in applications such as heating controls, motor controls, ight [y° T2708, D, Mong He cores, ypee hey. dimmers, and power-switching systems. temperature of +75°C and repetitive off-state voltage ratings ‘These triacs are designed to switch from an off-state to an ‘of 200, 400, 600, and 800 volts, respectively. ‘on-state condition for either polarity of applied voltage with ‘727008 ‘27000 ‘T2700M ‘T2700N i Tony (Toe 10086), 000 III) $$ 8 A Iysu (for 1 full cycle) 60 HZ .... +s -eeereeeeeeee ere eees —— 10 —________——_—_ A ’ lor OTE TCOTOCOOOOOOOO OS Css —— A Pow (fOr 1 pS MAK.) ... eee eeeeeese eee e eee eee ee 16 — w TStoraged v..seeeceeeeceessesessceeeeeeeeeeeeeey eee 765 t0 150 ———— °C T; (During soldering): *For elther polarity of main terminal 2 voltage (Vixr2) with reference to main terminal 1. For either polarity of gate voltage (Vg) with reference to main terminal 1. ‘AFor temperature Measurement reference point, ee Dimensional Outline. | g12 | 1348 €-13
G E SOLID STATE o1 ve Bj 3875082 go1780b 4 |
3875081 G E SOLID STATE — oie 17806 «=D T2513
ELECTRICAL CHARACTERISTICS
At Maximum Ratings and at Indicated Case Temperature (Tq) Unless Otherwise Specified For All Types . CHARACTERISTIC SYMBOL | Unless Otherwise Specified : [min [ typ. |_max._| Peak Off-State Current:” Gate open, T, = 125°C, Vonom = Max. rated value Maximum On-State Voltage:* For ip = 30A (peak), To = 25°C ..sseeseesseseseeseesertes Vow v DC Holding Current:” Gate open, initial principal current = 150 mA (OC), vp = 12V: To = 25°C oeeecesccssescesesssseseeesesneeneenentes - 18 30 Critical Rate-of-Rise of Commutation Voltage:” For Vo = Vorous frwas) = 6 A, Commutating di/dt = 32 A/ms, and gate unenergized ALT C= 100°C... eessecsceseeestesseeceesernetens v/dt Vius . Critical Rate of Rise of Off-State Voltage:” For Vo = Vorou. exponential voltage rise, and gate open At To = 125°C T2500B oo. eseseeseesceseseseeeeeeeeeessees 30 150 T2500D eee eseseeeseesteessesecseeneees 20 400 T2500M EID | dwt 16 70 Vis T2500N oe eeeeceecesseeeeeeeseeeeeeeeeeee 10 50 . DG Gate-Trigger Current:"t For vp = 12 volts (do), R, = 30, Te = +25°C, and Specified Triggering Mode: I* Mode: Vyr2 positive, Vg Positive... .eeeeeeeseee ~- 15 25 DC Gate-Trigger Voltage:” t i For Vo = 12 V(DC), R, = 300 i For Vo = Vonous Pu, = 125.2, Te = 125°C 02 = - . Gate-Controlled Turn-On Time: : (Delay Time + Rise Time) : For Vo = Venous Iq = 160 MA, t, = 0.1 ys, Thermal Resistance: ° “For elther polarity of main terminal 2 voltage (Vyqr2) With reference to main terminal 1. ‘For either polarity of gate voltage (Va) with reference to main terminal 1, i H Hl i ‘ —— it ; 7349 E14
G E SOLID STATE er anys | ou dQ sa7soa1 oor7a07 &
3875081 G E SOLID STATE O1E 17807 pT 2s-l3
72700 Series ;
ESSER LASS Teste] |W sSni"wnowarocrwesnceane | f [ee eee | ae HEHEHE Orr Om Ee ES Sees) | Be Hace HEE rrr PSS ee) |e py SEES eee URES) |e SEES eee rrT Ee HEEH i et Me cree ttt eal a Ee HEEL aaEEEET IN aREEEET ‘pas-133003 RMS ON-STATE CURRENT [Ir (rmsi] —A Fig. 1 — Power esipation ve on-state current. Fig, 2— Alowabl case lamporaur ve. on-state current. ofereteeeeaiteiae [TUN |p sees 7 fa ae caer cite et NCI Leese) |p 27 EB INT THI | settee’ suace corner Fog eo eee eee ee ieee Sey Ae eo PSNI | ‘OVERLOAD MAY NOT BE RE~ Ea eS es ae ee ene Se tee s nt Sra SLAG fee ee ee | ba TP NL Sowes FeNceRATURE has nerURNED 35 EES] dete cae ees B° COS ooo ee BE CTMMpr= Sel T) BE EE RE SCOCTTMP CUMMSROMM gE Ae Foo Ts Ae ee | CC i Bo SESREES Fe Dee ee eieeieresesl BSE aes ee CC Con fee eee Ir ‘ sunce Cimmenr omanion-rat creues ee POITIVE OR NCSATINE MTANTANEGUS g es EEEEEEEEEEEEE EEE FA aeeaed aHnsesrassssescatessessednseers| iE BaestaHedeatesPHateHauestonestoteatagetsient 8 Biceatettas ereattiesteecateresattenaiit Feawecate eeqet tae at iaceuetaeeaeeea i =PEEEEFEEEE SSE EEE Pom teste ants COREE 5 feetesseatased ttecassesscoed enazstiii Pe HEE SSE negara ee Ea sasaeitatestsigeedepesssntesfantiaiai Aseesutuesaeuetssretsstescsseatstsetsetessss| OC OATE-TRIOGER MILLIAMPERES (1gq) case TEMPERATURE TG)" snuscisemtt : Fig. § — DC holding current for either direction of on-state Fig. 6 — Typical turn-on time vs. gate-trigger current. fuventvaccesotomporature ' 84 OO : +1350 F-O1
G E SOLID STATE 01 Def) 3e75082 oor7ane 8 it
3875081 G E SOLID STATE O1E 17808 «pv T-257/135
SSS iT rls:
72700 Series
PRNcinat De VOLTS aeeseezastinensnenza| PRNcrAL oc vous. A SEseasGRSesaseacsseasestssessessssseeesesces| Ey ee seetaced tgueseaseseetszuacesssertetescsscs| SSreE scr aay sceeeeatseeuetaetantestettoetoered SSuastetuabactsetsctronns-Cclaetattnatsserecy| CASE TEMPERATURE (TQI—"E CARE TEMPERATURE (Tel °C Fig. 7 — DC gate-trigger current (for I* and il triggering Fig. 8 — DC gate-trigger current (for I~ and IlI* triggering Oe cartes Oe pe ie camperdtrs a. ae CT nt oo rs REESEERSHESSSSEonagessestcechomstsesesosezey| | Pall EAM cr eeeeteeetrceerener cate Am OT 2
3 FREER EEE pe J PA
| iy UCSHEETEEEEDUIEEEOMTIEEERCEREETEEESA TE % aac TTT TTT : pam eeeeeeeeeetettttttrtitacaceeeeeeeeeeeeetety eC Co | | Esp iar AIEEE HELL AGES GE Eau naz A A | . ee 8S j - 1351 F-02
G E SOLID STATE on eff 367s0a1 oo17809 0 * 3875081 G E SOLID STATE : ote 17809 OD I-2.S13 Pie | | ! utter wm J | oy / 1 \\ » | | I i 1 1 \\ | | | | j-euer o- wpe —- | | \\ {1 ero | \\ | Cineeer | ! 1 Seana | een qT! [7S sox vows | i ia {| ~ bhava ° nara 1, coumae_{f pw rari H 1 | Ti
7 T + “- Nor
prc, | \\ | Lom rone Tetinae | comuranno ot ATTEN --_\\ - ce rer ! ' ‘s2Ls-2409R2 Fig. 11 — Oscilloscope display of commutating av/at. Fig. 12 — Oscilloscope nad for measurement of gate-controlled H i : 816 _ a