T1010H-6G ISC
Document overview
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Technical content
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FEATURES
- LogicLevel SensitiveTraic
- MediumCurrentTraic
- 150℃Max.TjTurn-off Commutation
APPLICATIONS
- TheControlofACActuators inAppliances
- IndustrialSystems
- TheMulti-Port Driveofthe Microcontroller ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM RepetitivePeakOff-stateVoltage 600 V VRRM RepetitivePeakOff-stateVoltage 600 V IT(RMS) NonRepetitiveSurgePeakOn-stateCurrent(fullsinewave,TC=135°C) 10 A ITSM Non-repetitivePeakOn-stateCurrent,FullCycle f=60Hz,t=16.7ms 105 A f=50Hz,t=20ms 100 A I2t I2tValueforFusing(tp=10ms) 66 A2S PG(AV) AverageGatePowerDissipation,TJ=150°C 1 W IGM PeakGateTriggerCurrenttp=20us,TJ=150°C 4 A TJ OperatingJunctionTemperature -40~150 ℃ Tstg StorageTemperature -40~150 ℃ di/dt Repetitiverateofriseof on-statecurrentaftertriggering,TJ=150°C 50 A/us
www.iscsemi.com 2 THERMALCHARACTERISTICS ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitivepeakreversecurrent VR=VRRM -- 5.0 uA IDRM Repetitivepeakoff-statecurrent VD=VDRM -- 5.0 uA IGT Gatetriggercurrent Ⅰ-Ⅱ-Ⅲ VD=12V,RL =33Ω 1 10 mA VGT Gatetriggervoltageall quadrant Ⅰ-Ⅱ-Ⅲ -- 1.0 V VT On-statevoltage ITM=14.1A,tp=380μs -- 1.5 V dv/dt CriticalRateofRiseofOff-state Voltage VD =67%VDRM,TJ =150°C 75 -- V/us IH Holdingcurrent IT=100mA -- 25 mA IL LatchingCurrent Ⅰ-Ⅲ IG=1.2IGT -- 30 mA Ⅱ -- 35 mA PACKAGEOUTLINE Dimensionsinmm TO-263 SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.5 ℃/W
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