T06 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor T06
DESCRIPTION
- High Voltage: VCBO= 400V(Min.)
- Fast Switching Speed- : t f= 750ns(Max)
- Low Collector Saturation Voltage- : V CE(sat)= 1.0V(Max)@ IC= 5A
APPLICATIONS
- Switching for dynamotor excitation
- For use in horizontal deflection output stage of TV’s and CTV’s circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor T06
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage I C= 50mA; IB= 0 200 V VCE(sat) Collector-Emitter Sa turation Voltage I C= 5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Satu ration Voltage I C= 5A; IB= 0.5A 1.2 V ICBO Collector Cutoff Current V CB= 400V; IE= 0 0.1 mA IEBO Emitter Cutoff Current V EB= 6V; IC=0 0.1 mA hFE DC Current Gain I C= 1A; VCE= 5V 80 160 fT Current-Gain—Bandwidth Product I C= 0.5A; VCE= 10V; f= 1.0MHz 10 MHz tf Fall Time IC= 5A; IB1= -IB2= 0.6A, L= 150μH VCC= 40V 0.75 μs
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc Silicon NPN Power Transistor T06