T06

74HC3G06 PHILIPS

Document overview

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Technical content

Product specification Supersedes data of 2003 May 15

2003 Dec 02

74HC3G06; 74HCT3G06 Inverter with open-drain outputs

2003 Dec 02 2

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06

FEATURES

• Wide supply voltage range from 2.0 to 6.0 V
• High noise immunity
• Low power dissipation
• SOT505-2 and SOT765-1 package
• ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from−40 to +85°C and −40 to +125°C.

DESCRIPTION

The 74HC3G06/74HCT3G06 is a high-speed Si-gate CMOS device. Specified in compliance with JEDEC standard no. 7A. The 74HC3G06/74HCT3G06 provides three inverting buffers. The outputs of the 74HC3G06; 74HCT3G06 devices are open drains and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level. QUICK REFERENCE DATA GND = 0 V; T amb =2 5°C; tr =tf≤ 6.0 ns. Notes 1. C PD is used to determine the dynamic power dissipation (PD inµW). PD =C PD × VCC 2 × fi× N+ Σ(CL × VCC 2 × fo) where: fi= input frequency in MHz; fo = output frequency in MHz; C L = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(C L × VCC 2 × fo) = sum of the outputs. 2. For 74HC3G06 the condition is VI= GND to VCC . For 74HCT3G06 the condition is VI= GND to VCC − 1.5 V. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC3G HCT3G tPZL propagation delay nA to nY C L = 50 pF; VCC = 4.5 V 9 9 ns tPLZ propagation delay nA to nY C L = 50 pF; VCC = 4 . 5 V 1 11 2n s C I input capacitance 1.5 1.5 pF C PD power dissipation capacitance per buffer notes 1 and 2 4 4 pF

2003 Dec 02 3

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 FUNCTION TABLE See note 1. Note 1. H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.

ORDERING INFORMATION

TEMPERATURE RANGE PINS PACKAGE MATERIAL CODE MARKING 74HC3G06DP −40 to +125°C 8 TSSOP8 plastic SOT505-2 H06 74HCT3G06DP −40 to +125°C 8 TSSOP8 plastic SOT505-2 T06 74HC3G06DC −40 to +125°C 8 VSSOP8 plastic SOT765-1 H06 74HCT3G06DC −40 to +125°C 8 VSSOP8 plastic SOT765-1 T06 PIN SYMBOL DESCRIPTION 1 1A data input 2 3Y data output 3 2A data input

4 GND ground (0 V)

2003 Dec 02 4

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 handbook, halfpage MNB030 VCC 1Y3Y 2YGND Fig.1 Pin configuration. handbook, halfpage MNB031 1 26 Fig.2 Logic symbol. handbook, halfpage MNB032 1A 1Y17 2A 2Y35 3A 3Y62 Fig.3 IEC logic symbol. handbook, halfpage MNA586 Y A GND Fig.4 Logic diagram (one driver).

2003 Dec 02 5

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 110°C the value of P D derates linearly with 8 mW/K. SYMBOL PARAMETER CONDITIONS 74HC3G06 74HCT3G06 UNIT VI input voltage 0 − 6.0 0 − 5.5 V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature see DC and AC characteristics per device −40 +25 +125 −40 +25 +125 °C t r, tf input rise and fall times VCC = 2.0 V −− 1000 −−− ns VCC = 4.5 V − 6.0 500 − 6.0 500 ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V IIK input diode current V I< −0.5 V or VI>V CC + 0.5 V; note 1 −± 20 mA IOK output diode current V O < −0.5 V; note 1 −− 20 mA VO output voltage active mode; note 1 −0.5 V CC + 0.5 V high-impedance mode; note 1 −0.5 7.0 V IO output sink current −0 . 5V<VO < 7.0 V; note 1 − 25 mA ICC , IGND VCC or GND current note 1 − 50 mA Tstg storage temperature −65 +150 °C PD power dissipation T amb = −40 to +125°C; note 2 − 300 mW

2003 Dec 02 6

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 DC CHARACTERISTICS Type 74HC3G06 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Note 1. All typical values are measured at Tamb =2 5°C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT OTHER V CC (V) Tamb = −40 to +85°C; note 1 VIH HIGH-level input voltage 2.0 1.5 1.2 − V 4.5 3.15 2.4 − V 6.0 4.2 3.2 − V VIL LOW-level input voltage 2.0 − 0.8 0.5 V 4.5 − 2.1 1.35 V 6.0 − 2.8 1.8 V VOL LOW-level output voltage VI=V IH or VIL IO =2 0µA 2.0 − 0 0.1 V IO =2 0µA 4.5 − 0 0.1 V IO = 4.0 mA 4.5 − 0.15 0.33 V IO =2 0µA 6.0 − 0 0.1 V IO = 5.2 mA 6.0 − 0.16 0.33 V ILI input leakage current V I=V CC or GND 6.0 −−± 1.0 µA ILO output leakage current VI=V IH; VO =V CC or GND 6.0 −−± 5.0 µA ICC quiescent supply current VI=V CC or GND; IO = 0 6.0 −− 10 µA Tamb = −40 to +125°C VIH HIGH-level input voltage 2.0 1.5 −− V 4.5 3.15 −− V 6.0 4.2 −− V VIL LOW-level input voltage 2.0 −− 0.5 V 4.5 −− 1.35 V 6.0 −− 1.8 V VOL LOW-level output voltage VI=V IH or VIL IO =2 0µA 2.0 −− 0.1 V IO =2 0µA 4.5 −− 0.1 V IO = 4.0 mA 4.5 −− 0.4 V IO =2 0µA 6.0 −− 0.1 V IO = 5.2 mA 6.0 −− 0.4 V ILI input leakage current V I=V CC or GND 6.0 −−± 1.0 µA ILO output leakage current VI=V IH; VO =V CC or GND 6.0 −−± 10 µA ICC quiescent supply current VI=V CC or GND; IO = 0 6.0 −− 20 µA

2003 Dec 02 7

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 Type 74HCT3G06 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Note 1. All typical values are measured at Tamb =2 5°C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT OTHER V CC (V) Tamb = −40 to +85°C; note 1 VIH HIGH-level input voltage 4.5 to 5.5 2.0 1.6 − V VIL LOW-level input voltage 4.5 to 5.5 − 1.2 0.8 V VOL LOW-level output voltage VI=V IH or VIL IO =2 0µA 4.5 − 0 0.1 V IO = 4.0 mA 4.5 − 0.15 0.33 V ILI input leakage current V I=V CC or GND 5.5 −−± 1.0 µA ILO output leakage current VI=V IH; VO =V CC or GND 5.5 −−± 5.0 µA ICC quiescent supply current VI=V CC or GND; IO = 0 5.5 −− 10 µA ΔICC additional supply current per input VI=V CC − 2.1 V; IO = 0 4.5 to 5.5 −− 375 µA Tamb = −40 to +125°C VIH HIGH-level input voltage 4.5 to 5.5 2.0 −− V VIL LOW-level input voltage 4.5 to 5.5 −− 0.8 V VOL LOW-level output voltage VI=V IH or VIL IO =2 0µA 4.5 −− 0.1 V IO = 4.0 mA 4.5 −− 0.4 V ILI input leakage current V I=V CC or GND 5.5 −−± 1.0 µA ILO output leakage current VI=V IH; VO =V CC or GND 5.5 −−± 10 µA ICC quiescent supply current VI=V CC or GND; IO = 0 5.5 −− 20 µA ΔICC additional supply current per input VI=V CC − 2.1 V; IO = 0 4.5 to 5.5 −− 410 µA

2003 Dec 02 8

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 AC CHARACTERISTICS Type 74HC3G06 GND = 0 V; tr =tf≤ 6.0 ns; CL =5 0p F . Note 1. All typical values are measured at Tamb =2 5°C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT WAVEFORMS V CC (V) Tamb = −40 to +85°C; note 1 tPZL propagation delay nA to nY see Figs 5 and 6 2.0 − 22 95 ns 4.5 − 91 8 n s 6.0 − 81 6 n s tPLZ propagation delay nA to nY see Figs 5 and 6 2.0 − 24 95 ns 4.5 − 11 20 ns 6.0 − 10 19 ns tTHL output transition time see Figs 5 and 6 2.0 − 18 95 ns 4.5 − 61 9 n s 6.0 − 51 6 n s Tamb = −40 to +125°C tPZL propagation delay nA to nY see Figs 5 and 6 2.0 −− 125 ns 4.5 −− 25 ns 6.0 −− 20 ns tPLZ propagation delay nA to nY see Figs 5 and 6 2.0 −− 125 ns 4.5 −− 27 ns 6.0 −− 23 ns tTHL output transition time see Figs 5 and 6 2.0 −− 125 ns 4.5 −− 25 ns 6.0 −− 20 ns

2003 Dec 02 9

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 Type 74HCT3G06 GND = 0 V; tr =tf≤ 6.0 ns; CL =5 0p F . Note 1. All typical values are measured at Tamb =2 5°C. AC WAVEFORMS SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT WAVEFORMS V CC (V) Tamb = −40 to +85°C; note 1 tPZL propagation delay nA to nY see Figs 5 and 6 2.0 − 92 4 n s tPLZ propagation delay nA to nY see Figs 5 and 6 2.0 − 12 27 ns tTHL output transition time see Figs 5 and 6 2.0 − 61 9 n s Tamb = −40 to +125°C tPZL propagation delay nA to nY see Figs 5 and 6 2.0 −− 29 ns tPLZ propagation delay nA to nY see Figs 5 and 6 2.0 −− 32 ns tTHL output transition time see Figs 5 and 6 2.0 −− 22 ns handbook, full pagewidth MNB033 tPLZ Vx nA input nY output VI VCC VM VOL GND tPZL tTHL VM Fig.5 The input (nA) to output (nY) propagation delays and transition times. VX = 0.1× VCC . For 74HC3G06: VM = 50%; VI= GND to VCC . For 74HCT3G06: VM = 1.3 V; VI= GND to 3.0 V.

2003 Dec 02 10

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 handbook, full pagewidth open GND 50 pF VCC VCC VI VO MNA742 D.U.T. C L = R T R L = 1 kΩ PULSE GENERATOR Fig.6 Load circuitry for switching times. Definitions for test circuit: R L = Load resistor. C L = Load capacitance including jig and probe capacitance. R T = Termination resistance should be equal to the output impedance Zo of the pulse generator. TEST S1 tPLH /tPHL VCC tPLZ /tPZL VCC

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Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 PACKAGE OUTLINES UNIT A 1 A max. A 2 A 3 bp LH E Lp wyvce D (1) E(1) Z(1) q REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.15 0.00 0.95 0.75 0.38 0.22 0.18 0.08 3.1 2.9 3.1 2.9 0.65 4.1 3.9 0.70 0.35 0°0.13 0.10.20.5 DIMENSIONS (mm are the original dimensions) Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.47 0.33 w Mbp D Z e 0.25 8 5 q Lp (A3) detail X A L H E E c v M A XA y 2.5 5 mm0 scale TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mmSOT505-2 1.1 pin 1 index

2003 Dec 02 12

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 UNIT A 1 A max. A 2 A 3 bp LH E Lp wyvce D (1) E(2) Z(1) θ REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.15 0.00 0.85 0.60 0.27 0.17 0.23 0.08 2.1 1.9 2.4 2.2 0.5 3.2 3.0 0.4 0.1 0°0.13 0.10.20.4 DIMENSIONS (mm are the original dimensions) Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.40 0.15 Q 0.21 0.19 SOT765-1 MO-187 02-06-07 w Mbp D Z e 0.12 8 5 θ Q Lp (A3) detail X A L H E E c v M A X A y 2.5 5 mm0 scale VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1 pin 1 index

2003 Dec 02 13

Philips Semiconductors Product specification Inverter with open-drain outputs 74HC3G06; 74HCT3G06 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R44/02/pp14 Date of release:2003 Dec 02 Document order number: 9397 750 12344