STW12N120K5 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 2
Technical content
N-ChannelSuperJunctionMOSFETTransistor www.iscsemi.com 1
FEATURES
- DrainCurrent-ID=12A@TC=25℃
- DrainSource Voltage-VDSS=1200V(Min)
- Static Drain-Source On-Resistance -RDS(on) =0.62Ω(TYP)@VGS=10V
DESCRIPTION
- Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1200 V VGS Gate-SourceVoltage-Continuous ±30 V ID DrainCurrent-Continuous 12 A IDM DrainCurrent-SinglePulse 48 A PD TotalDissipation@TC=25℃ 250 W TJ Max. OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.5 ℃/W
N-ChannelSuperJunctionMOSFETTransistor www.iscsemi.com 2 ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwisespecified） PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=1mA 1200 -- -- V IDSS ZeroGateVoltageDrainCurrent VDS=1200V;VGS=0 -- -- 1 uA IGSS Gate-BodyLeakageCurrent VGS= ±30V;VDS=0 -- -- ±10 uA VGS(th) GateThresholdVoltage VDS=VGS;ID=0.25mA 3.0 -- 5.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=6A -- 0.62 0.8 Ω VSD ForwardOn-Voltage IS=12A;VGS=0 -- -- 1.5 V