STP8N65M5 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor STP8N65M5
- FEATURES
- HigherVDSSrating
- Excellentswitchingperformance
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 650 V VGSS Gate-SourceVoltage ±25 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 7.0 4.4 A IDM DrainCurrent-SinglePulsed 28 A PD TotalDissipation 70 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.79 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor STP8N65M5 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 650 V VGS(th) GateThresholdVoltage VDS=±25V;ID=0.25mA 3 5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=3.5A 0.6 Ω IGSS Gate-SourceLeakageCurrent VGS= ±25V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=650V;VGS=0V;TJ=25℃ TJ=125℃ 100 μA VSD Diodeforwardvoltage ISD=7A,VGS =0V 1.5 V