STP80NF55-06 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor STP80NF55-06
- FEATURES
- TypicalRDS(on)=0.005Ω
- Excellentswitchingperformance
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Solenoid and relay drivers
- DC-DCconverters
- Automotiveenvironment
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 55 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 57 A IDM DrainCurrent-SinglePulsed 320 A PD TotalDissipation 210 W Tj Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.7 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor STP80NF55-06 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 55 V VGS(th) GateThresholdVoltage VDS=±20V;ID=0.25mA 2 4 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=40A 6.5 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=55V;VGS=0V；TJ=25℃ TJ=125℃ 10 μA VSD Diodeforwardvoltage ISD=80A,VGS =0V 1.5 V