STP6NK90Z ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor STP6NK90Z
- FEATURES
- TypicalRDS(on)=1.56Ω
- Withlowgatedrive requirements
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Idealforoff-linepowersupplies adaptors and PFC
- Lighting
- Highcurrent，high speedswitching
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 900 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 5.8 3.65 A IDM DrainCurrent-SinglePulsed 23.2 A PD TotalDissipation 140 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.89 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor STP6NK90Z ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 900 V VGS(th) GateThresholdVoltage VDS=±30V;ID=0.1mA 3 4.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=2.9A 1.56 2 Ω IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±10 μA IDSS Drain-SourceLeakageCurrent VDS=900V;VGS=0V；TJ=25℃ TJ=125℃ 50 μA VSDF Diodeforwardvoltage ISD=5.8A,VGS =0V 1.6 V