STP6NK60Z ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor STP6NK60Z
DESCRIPTION
- DrainCurrent ID=6A@TC=25℃
- DrainSource Voltage- :VDSS=600V(Min)
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designed forhighspeed switchingapplications inswitching power suppliesandadaptors ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage(VGS=0) 600 V VGS Gate-SourceVoltage ±30 V ID DrainCurrent-continuous@TC=25℃ TC=100℃ 3.8 A ID(puls) PulseDrainCurrent 24 A Ptot TotalDissipation@TC=25℃ 110 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.14 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 62.5 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor STP6NK60Z
- ELECTRICALCHARACTERISTICS(TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=VGS; ID=250uA 3.0 4.5 V VSD DiodeForwardOn-Voltage IS=6A;VGS=0 1.6 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=3A 1 1.2 Ω IGSS Gate-BodyLeakageCurrent VGS= ±20V;VDS=0 ±10 uA IDSS ZeroGateVoltageDrainCurrent VDS=600V;VGS=0Tj=25℃ Tj=125℃ 50 µA