STP6N80K5 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor STP6N80K5
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤1.6Ω
- Enhancementmode
- FastSwitching Speed
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- Besuitable forsynchronous rectification forserver and generalpurpose applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 800 V VGS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous 4.5 A IDM DrainCurrent-SinglePulsed 18 A PD TotalDissipation@TC=25℃ 85 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.47 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor STP6N80K5 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID =1mA 800 V VGS(th) GateThresholdVoltage VDS=VGS;ID =100μA 3 5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=2A 1.6 Ω IGSS Gate-SourceLeakageCurrent VGS=±20V;VDS=0V ±10 μA IDSS Drain-SourceLeakageCurrent VDS=800V;VGS=0V 1 μA VDS=800V;VGS=0V;Tj=125℃ 50 VSD Diodeforwardvoltage Is=4.5A;VGS =0V 1.5 V