STP60NF06L ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor STP60NF06L
- FEATURES
- Withlowgatedrive requirements
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Solenold and relay dirvers
- DC-DCconverters
- Automotiveenvironment
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 60 V VGSS Gate-SourceVoltage ±15 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 42 A IDM DrainCurrent-SinglePulsed 240 A PD TotalDissipation 110 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.36 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor STP60NF06L ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 60 V VGS(th) GateThresholdVoltage VDS=±15V;ID=0.25mA 1 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=30A 12 14 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±15V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=60V;VGS=0V；TJ=25℃ TJ=125℃ 10 μA VSDF Diodeforwardvoltage ISD=100A,VGS =0V 1.2 V