STP5NK80Z NJSEMI

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Technical content

, D na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 STP5NK80Z - STP5NK80ZFP N-CHANNEL 800V - 1.9Q - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK80Z STP5NK80ZFP VDSS 800V 800V RDS(on) <2.4Q <2.4Q ID 4. 3 A 4.3 A Pw 110 W SOW TYPICAL RDS(on) = 1.9Q EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATABILITY TO-220 TO-220FP

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. HIGH CURRENT, HIGH SPEED SWITCHING . IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC . LIGHTING INTERNAL SCHEMATIC DIAGRAM NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

IDM (•) PTOT VESD(G-S) dv/dt(1) Viso Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (Res = 20 k£J) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5Kfi) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature Value STP5NK80Z STP5NK802FP 800 800 ±30 4.3 2.7 17.2 110 0.88 4.3 (*) 2.7 (*) 17.2 (*) 0.24 3500 4.5 2500 -55 to 150 -55 to 150 Unit V V V A A A W W/°C V V/ns V (•) Pulse width limited by safe operating area (1) Iso S4.3A, di/dt <200A/us, VDD < V(BR)DSS, Tj < TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Rthj-amb TI Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose TO-220 1.14 TO-220FP 4.2 62.5 300 °C/W "C/W AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 4.3 190 Unit A mj GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions lgs=± 1 mA (Open Drain) Min. Typ. Max. Unit V (#) When mounted on minimum Footprint

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS loss IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VQS = 0 VDS = Max Rating VDS = Max Rating, Tc = 125 °C VGS = ± 30V VDS = VGS, ID = 100uA VGS = 10V, ID = 2. 15 A Win. 800 Typ. 3.75 1.9 Max. ±10 4.5 2.4 Unit V uA uA MA V a DYNAMIC Symbol 9fs(1) Ciss Coss Crss Cosseq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions VDS = 15V, ID = 2. 15 A VDS = 25V, f= 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 400V Min. Typ- 4.25 910 Max. Unit S PF pF PF PF SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 400 V, ID = 2 A RG = 4.7nVGs=10V (Resistive Load see, Figure 3) VDD = 640V, ID = 4.3 A, VGS = 10V Min.

  • typ. 32.4 18.5 Max. 45.5 Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 400 V, ID = 2 A RG = 4.7nVGs = 10V (Resistive Load see, Figure 3) VDD = 640V, ID = 4.3 A, RG = 4.7£2, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD(1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 4. 3 A, VGS = 0 ISD = 4.3 A, di/dt= 100A/US VDD = 40V, Tj = 150°C (see test circuit, Figure 5) Min. Typ. 500 Max. 4.3 17.2 1.6 Unit A A V ns uC A Note: 1. Pulsed: Pulse duration = 300 us, duty cycle 1.5 %. 2, Pulse width limited by safe operating area. 3- Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS- '