STP45N10F7 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor STP45N10F7
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤18mΩ
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 100 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@TC=25℃ 45 A IDM DrainCurrent-SinglePulsed 180 A PD TotalDissipation 60 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 2.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor STP45N10F7 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 100 V VGS(th) GateThresholdVoltage VDS=±20V;ID=250µA 2.5 4.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=22.5A 18 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V 100 nA IDSS Drain-SourceLeakageCurrent VDS=60V;VGS=0V;Tc=25℃ Tc=125℃ 100 μA VSDF Diodeforwardvoltage ISD=45A,VGS =0V 1.1 V