STP25N06 NJSEMI

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Technical content

, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 STP25N06 STP25N06FI N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N06 STP25N06FI VDSS 60 V 60 V RoS(on) < 0.065 ii < 0.065 n ID 25 A 16 A TYPICAL RDS(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM 0(2) 0 (1) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID !DM(.) Plot Viso Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (Ros = 20 kti) Gate-source Voltage Drain Current (continuous) at Tc = 25 °C Drain Current (continuous) at Tc = 100 °C Drain Current (pulsed) Total Dissipation at Tc = 25 °C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Value STP25N06 STP25N06FI + 20 100 0.6 100 0.27 2000 -65 to 175 175 Unit V V V A A A W W/°C V (•) Pulse width limited by safe operating area Quality Semi-Conductors

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 1.57 ISOWATT220 3.75 62.5 0.5 300 °C/W °C/W °C/W AVALANCHE CHARACTERISTICS Symbol IAR EAS EAR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T, max, 5 < 1%) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) Repetitive Avalanche Energy (pulse width limited by T, max, 8 < 1%) Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 °C, pulse width limited by Tj max, 6 < 1%) Max Value 100 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS loss IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (Vcs = 0) Gate-body Leakage Current (Vos = 0) Test Conditions !D=250jiA VGS=O VDS = Max Rating VDS= Max Rating x 0.8 TC=125°C VGS = ±20 V Min. Typ. Max. + 100 Unit V HA HA nA ON(*) Symbol VcS(th) RDS(on) lD(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS=VGS ID=250HA VGS = 10V b= 12.5 A VDS > ID(OH) X RDS(on)max VGs= 10 V Min. Typ. 2.9 0.048 Max. 0.065 Unit V ii A DYNAMIC Symbol 9fs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > b(on) X RoS(on)max ID = 12.5 A VDS= 25 V f = 1 MHz VGS= 0 Min. Typ. 700 320 Max. 900 450 150 Unit S PF PF pF

ELECTRICAL CHARACTERISTICS (continued) SWITCH ING ON Symbol td(on) tr (di/dt)on Qg QgS Qgd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30V ID=3A RG= 50 Q VQS = 10 V (see test circuit, figure 3) VDD = 40V ID =25 A RG = 50 n VGS = 10 V (see test circuit, figure 5) VDD = 40 V b =25 A VGs=10V Min. Typ. 230 Max. 130 Unit ns ns A/u,s nC nC nC SWITCHING OFF Symbol tr(Voff) tf te Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 40V ID =25 A Ro=50ii VGS = 10V (see test circuit, figure 5) Min. Typ. 170 Max. 120 120 250 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM(') VSD(*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 25 A VGS = 0 ISD = 25 A di/dt = 100 A/U.S VDD = 30V Tj=150°C (see test circuit, figure 5) Min. Typ. 0.22 5.5 Max. 100 1.5 Unit A A V ns u.C A (*) Pulsed: Pulse duration = 300 us, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Areas For TO-220 IB (A) Safe Operating Areas For ISOWATT220 ee2«»»o s r J^£ /s- ™ ^ k OPE RATIOK V S 10, Ja 10ms m .1 4 » » „ I 411.2 ill. I 'IB 1CT1 10° 101 10Z VM(V) In (A) 1°2. 101. 10°. m'1 r V II D.C. L ; V ' • „ 5 OPE

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