STP20N10L ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor STP20N10L
- FEATURES
- WithTO-220 packaging
- Highspeed switching
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- DC-DCconverters
- Motorcontrol
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 100 V VGSS Gate-SourceVoltage ±15 V ID DrainCurrent-Continuous@Tc=25℃ Tc=100℃ 14 A IDM DrainCurrent-SinglePulsed 80 A PD TotalDissipation 105 W Tj OperatingJunctionTemperature -65~175 ℃ Tstg StorageTemperature -65~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.43 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor STP20N10L ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 100 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.25mA 1.0 2.5 V RDS(on) Drain-SourceOn-Resistance VGS=5V;ID=10A 90 120 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±15V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=100V;VGS=0V 1 μA VSDF Diodeforwardvoltage ISD=20A,VGS =0V 1.5 V