STP105N3LL ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor STP105N3LL
- FEATURES
- TypicalRDS(on)=0.0027Ω
- Withlowgatedrive requirements
- Highavalancheruggedness
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Solenold and relay dirvers
- DC-DC&DC-CAconverters
- Automotiveenvironment
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 30 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 150 105 A IDM DrainCurrent-SinglePulsed 320 A PD TotalDissipation 140 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperature -55~175 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.1 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor STP105N3LL ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 30 V VGS(th) GateThresholdVoltage VDS=±20V;ID=0.25mA 1 2.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=40A VGS=4.5V;ID=40A 2.7 3.5 3.5 4.5 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=30V;VGS=0V；TJ=25℃ TJ=125℃ 10 μA VSDF Diodeforwardvoltage ISD=40A,VGS =0V 1.1 V