STF34NM60ND ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor STF34NM60ND
- FEATURES
- Withlowgatedrive requirements
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±25 V ID DrainCurrent-ContinuousTc=25℃ Tc=100℃ 18 A IDM DrainCurrent-SinglePulsed 116 A PD TotalDissipation 40 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 3.1 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor STF34NM60ND ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 600 V VGS(th) GateThresholdVoltage VDS=±30V;ID=0.25mA 3.0 5.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=14.5A 110 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±25V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V;@Tc=25℃ Tc=125℃ 100 μA VSDF Diodeforwardvoltage ISD=29A,VGS =0V 1.6 V