SST4119

2N4117A VISHAY

Document overview

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Technical content

Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (/C0109S) IDSS Min (/C0109A) 4117 −0.6 to −1.8 −40 70 30 4118 −1 to −3 −40 80 80 4119 −2 to −6 −40 100 200 FEATURES BENEFITS APPLICATIONS /C0068Ultra-Low Leakage: 0.2 pA /C0068Very Low Current/Voltage Operation /C0068Ultrahigh Input Impedance /C0068Low Noise /C0068Insignificant Signal Loss/Error Voltage with High-Impedance Source /C0068Low Power Consumption (Battery) /C0068Maximum Signal Output, Low Noise /C0068High Sensitivity to Low-Level Signals /C0068High-Impedance Transducer Amplifiers /C0068Smoke Detector Input /C0068Infrared Detector Amplifier /C0068Precision Test Equipment

DESCRIPTION

The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information). G S TO-206AF (TO-72) D Top View 2N4117A 2N4118A 2N4119A C D G Top View PN4117A PN4118A PN4119A TO-226AA (TO-92) S D S G TO-236 (SOT-23) Top View SST4117 (T7)* SST4118 (T8)* SST4119 (T9)* *Marking Code for TO-236 For applications information see AN105.

www.vishay.com Document Number: 70239 S-41231—Rev. G, 28-Jun-04 ABSOLUTE MAXIMUM RATINGS Operating Junction Temperature : Power Dissipation (case 25/C0095C) : Notes a. Derate 2 mW/ /C0095C above 25/C0095C b. Derate 2.8 mW/ /C0095C above 25/C0095C SPECIFICATIONS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits 4117 4118 4119 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = −1 /C0109A , VDS = 0 V −70 −40 −40 −40 V Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA −0.6 −1.8 −1 −3 −2 −6 V Saturation Drain Current IDSS VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 /C0109A VGS = −20 V VDS = 0 V −0.2 −1 −1 −1 pA Gt R C t I VGS = −20 V VDS = 0 V TA = 150/C0095C Gate Reverse Current IGSS VGS = −10 V PN −0.2 −1 −1 −1 pAVGS = −10 V VDS = 0 V SST −0.2 −10 −10 −10 pA VGS = −10 V VDS = 0 V TA = 100/C0095C Gate Operating Currentb IG VDG = 15 V, ID = 30 /C0109A −0.2 pADrain Cutoff Currentb ID(off) VDS = 10 V, VGS = −8 V 0.2 pA Gate-Source Forward Voltageb VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Dynamic Common-Source Forward Transconductance gfs VDS = 10 V, VGS = 0 V 70 210 80 250 100 330 /C0109SCommon-Source Output Conductance gos VDS = 10 V, VGS = 0 V f = 1 kHz 3 5 10 /C0109S Common-Source Ci 2N/PN 1.2 3 3 3Common-Source Input Capacitance Ciss VDS = 10 V VGS = 0 V SST 1.2 pF Common-Source C VGS = 0 V f = 1 MHz 2N/PN 0.3 1.5 1.5 1.5 pF Common-Source Reverse Transfer Capacitance Crss f = 1 MHz SST 0.3 Equivalent Input Noise Voltageb en VDS = 10 V, VGS = 0 V f = 1 kHz 15 nV⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NT b. This parameter not registered with JEDEC.

Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Gate Leakage Current Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Output Characteristics 1000 800 06 3 0 gfs IDSS TA = 25/C0095C 100 mA IGSS @ 25/C0095C 100 mA Output Characteristics 500 400 300 100 −0.5 V −1.0 V −2.0 V −1.5 V VGS = 0 V 0.01 0.1 1 200 160 120 rDS @ ID = 10 /C0109A, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz rDS gos TA = −55/C0095C 125/C0095C VDS = 10 V f = 1 kHz 100 01 6 842 0 VGS = 0 V −0.5 V −0.4 V −0.3 V −0.2 V −0.1 V VGS(off) − Gate-Source Cutoff Voltage (V) VDS − Drain-Source Voltage (V) VDG − Drain-Gate Voltage (V) ID − Drain Current (mA)VGS(off) − Gate-Source Cutoff Voltage (V) VDS − Drain-Source Voltage (V) 600 400 200 12 18 24 25/C0095C VGS(off) = −0.7 V VGS(off) = −2.5 V 20040 12 0 16 842 0 12 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 300 240 180 120 10 mA 0.1 pA 1 pA 10 pA 100 pA 1 nA IGSS @ 125/C0095C VGS(off) = −2.5 V 10 mA VGS(off) = −2.5 V IDSS − Saturation Drain Current (µA) gfs − Forward Transconductance (µS)gos − Output Conductance (µS) gfs − Forward Transconductance (µS) IG − Gate Leakage ID − Drain Current (µA) ID − Drain Current (µA) TA = 125/C0095C rDS(on) − Drain-Source On-Resistance (k/C0087)

www.vishay.com Document Number: 70239 S-41231—Rev. G, 28-Jun-04 TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 300 240 180 Transconductance vs. Gate-Source VoltageTransfer Characteristics Transconductance vs. Gate-Source VoltageTransfer Characteristics Common-Source Input Capacitance vs. Gate-Source VoltageCircuit Voltage Gain vs. Drain Current 500 0 −4 −5−2−1 TA = −55/C0095C 125/C0095C 100 200 160 120 TA = 125/C0095C −55/C0095C TA = −55/C0095C 125/C0095C VDS = 10 V VDS = 10 V f = 1 kHz VDS = 10 V VDS = 10 V f = 1 kHz TA = −55/C0095C 125/C0095C 0.1 10.01 100 VGS(off) = −0.7 V −2.5 V RL /C004310 V ID Assume VDD = 15 V, VDS = 5 V 2.0 f = 1 MHz VDS = 0 V 10 V VGS − Gate-Source Voltage (V) ID − Drain Current (mA) VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V) V GS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V) VGS(off) = −0.7 V VGS(off) = −0.7 V VGS(off) = −2.5 V VGS(off) = −2.5 V 25/C0095C 25/C0095C 120 400 300 100 200 1.6 1.2 0.4 0.8 AV /C0043 gfs RL 1 /C0041RLgos 25/C0095C 25/C0095C gfs − Forward Transconductance (µS) g fs − Forward Transconductance (µS) AV − Voltage Gain Ciss − Input Capacitance (pF) ID − Drain Current (µA) I D − Drain Current (µA)

Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 0.01 0.1 1 Equivalent Input Noise Voltage vs. Frequency ID − Drain Current (mA) Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage On-Resistance vs. Drain CurrentOutput Conductance vs. Drain Current VDS = 10 V f = 1 kHz 0.5 0 −8 −20−16−4 0.4 0.3 0.1 f = 1 MHz VDS = 0 V 10 V 10 100 1 k 100 k 10 k 200 VDS = 10 V ID = 10 mA VGS = 0 V TA = −55/C0095C 125/C0095C ID − Drain Current (mA) VGS − Gate-Source Voltage (V) f − Frequency (Hz) 0.2 160 120 −12 VGS(off) = −2.5 V 0.01 0.1 1 VGS(off) = −0.7 V −2.5 V TA = 25/C0095C 25/C0095C en − Noise Voltage nV / HzrDS(on) − Drain-Source On-Resistance ( Ω ) gos − Output Conductance (µS) Crss − Reverse Feedback Capacitance (pF)