SSM4435 ETC1

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P -C hannel E nhancement Mode MOS F E T AB S OLUT E MAXIMUM R AT ING S (T A=25 C unless otherwise noted) P arameter S ymbol Limit Unit Drain-S ource Voltage V DS V G ate-S ource Voltage V G S 25 V Drain C urrent-C ontinuous @ T J =125 C -P ulsed ID -8 -40 -1.7 2.5 A A A W IDM Drain-S ource Diode F orward C urrent IS Maximum P ower Dissipation P D Operating J unction and S torage Temperature R ange T J , T S T G -55 to 150 C T HE R MAL C HAR AC T E R IS T IC S T hermal R esistance, J unction-to-Ambient R J A 50 /WC S S M4435 a a a a b 1 2 3 4 8 7 6 5 S S S G D D D D J ULY ,2004 V er1.1 S urface Mount P ackage. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -8A 20 @ V G S = -10V 35 @ V G S = -4.5V F E AT UR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S O-8 -30V S outh S ea S emiconductor SSS

E LE C T R IC AL C HAR AC T E R IS T IC S (T A 25 C unles s otherwis e noted)= P arameter S ymbol C ondition Min Typ Max Unit OF F C HAR AC T E R IS T IC S Drain-S ource B reakdown Voltage B V DS S =V G S 0V, ID -250uA= -30 V Zero G ate Voltage Drain C urrent IDS S V DS -24V, V G S 0V= = -1 uA G ate-B ody Leakage IG S S V G S 25V, V DS 0V= = 100 nA ON C HAR AC T E R IS T IC S b G ate T hreshold Voltage V G S (th) V DS V G S , ID = -250uA= -1 V Drain-S ource On-S tate R esistance R DS (ON) V G S -10V, ID -8.0A 15 20 V G S -4.5V, ID -5.0A 22 35 On-S tate Drain C urrent ID(ON) V DS = -5V, V G S = -10V -20 A SF orward Transconductance F Sg V DS -15V, ID - 8.0A DY NAMIC C HAR AC T E R IS T IC S c Input C apacitance C IS S C R S S C OS SOutput C apacitance R everse Transfer C apacitance V DS =-15V, V G S = 0V f =1.0MHZ P F P F P F S WIT C HING C HAR AC T E R IS T IC S c Turn-On Delay Time R ise Time Turn-Off Delay Time tD(ON) tr tD(OF F ) tf V D = -15V, ID = -1A, V G E N = - 10V, R G E N = 6 -ohm ns ns ns ns Total G ate C harge G ate-S ource C harge G ate-Drain C harge Qg Qgs Qgd V DS =-15V, ID = -8A, V G S =-10V nC nC nC C F all T ime = = m-ohm m-ohm nC V DS =-15V, ID=-8A,V G S =-10V V DS =-15V, ID=-8A,V G S =-4.5V -1.6 -3 33.6 95.4 169 17.4 17.6 137 8.1 3.3 17.3 1199 362

P arameter S ymbol C ondition Min Typ Max Unit E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted) C DR AIN-S O UR C E DIO DE C HAR AC T E R IS T IC S Diode F orward Voltage V S D V G S = 0V, Is =-1.7A -0.74 -1.2 V b Notes a.S urface Mounted on F R 4 B oard, t <=10sec. c.G uaranteed by design, not subject to production testing. b.P ulse Test:P ulse Width<=300us, Duty C ycle<= 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 3. C apacitance -V DS , Drain-to S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V )-V DS , Drain-to-S ource Voltage (V ) C , C apacitance (pF ) -ID, Drain C urrent (A) -ID, Drain C urrent (A) 0 2 4 6 8 10 12 F igure 4. On-R esistance Variation with Temperature On-R esistance(Ohms) R DS (ON), T j, J unction T emperature ( C ) (Normalized) 0 5 10 15 20 25 30 C iss C oss 1400 1150 900 750 500 250 C rss 25 C -55 C125 C 1.8 1.6 1.2 0.8 1.4 1.0 0.6 0 25 75 125 50-25-55 100 V G S =-10V ID=-8A -V G S =3V -V G S =4V

F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature V th, Normalized G ate-S ource T hres hold V oltagegF S , T rans conductance (S )-V G S , G ate to S ource V oltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltage-Is , S ource-drain current (A) F igure 7. T rans conductance V ariation with Drain C urrent -IDS , Drain-S ource C urrent (A) F igure 9. G ate C harge Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area -V DS , Drain-S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent -V S D, B ody Diode F orward V oltage (V ) T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) -ID, Drain C urrent (A) 0 5 10 15 20 V DS =-15V 20.0 10.0 1.0 V G S =0V 0 5 15 20 30 35 40 V DS =-15V ID=-8A 0.1 0.03 0.1 1 10 30 50 V G S =-10V S ingle P uls e T A=25 C RDS(ON) Limit 10ms100ms DC S S M4435 10 25 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA -50 -25 0 25 50 75 100 125 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=-250uA

F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms t V V t td(on) OUT IN on r 10% td(off) 90% 10% 10% 50% 50% 90% toff tf 90% P ULS E WIDT H T ransient T hermal Impedance 0.1 0.01 S quare Wave P ulse Duration (sec) F igure 13. Normalized T hermal T ransient Impedance C urve r(t),Normalized E ffective INV E R T E D Duty C ycle=0.5 0.2 0.1 0.05 0.02 S ingle P ulse 1 10 100 P DM 1. R thJ A (t)=r (t) * R thJ A 2. R thJ A=S ee Datasheet 3. T J M-T A = P DM* R thJ A (t) 4. Duty C ycle, D=t1/t2 -VDD R D V V R S V G G S IN G E N OUT L S S M4435

PAC K AG E OUT LINE DIME NS IONS S O-8 S Y MB OLS MIN MIN 0.053 0.004 0.189 0.150 0.228 0.016 1.35 0.10 4.80 3.81 5.79 0.41 MAX MAX 0.069 0.010 0.196 0.157 0.244 0.050 1.75 0.25 4.98 3.99 6.20 1.27 MILLIME T E R S INC HE S A D E H L e B H E L A C D 0.05 TYP. 0.016 TYP. 0.008 TYP. 0.015X45° S S M4435

unit:㎜ PACKAGE SOP 8N 150㏕ A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T 6.40 5.20 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 8.0 4.0 2.0 ±0.05 0.3 ±0.05 UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 M N W W1 H K S G R V 330 ± 1 ±1.5 12.4 + 0.2 16.8 - 0.4 ψ12.75 + 0.15 2.0 ±0.15 S S M4435