SSG6680 SECOS

Document overview

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Technical content

Features

  • Surface Mount Package * High Vgs Max. Rating Voltage Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient Max. A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a ±25 11.5 9.5 2.5 0.02 -55~+150 * Low On-Resistance o o o C o C o C o Absolute Maximum Ratings http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 0.25 Dimensions in millimeters 6.20 5.80 1.27Typ.0.35 0.49 4.80 5.00 0.100.25 1.35 1.75 0.40 0.90 0.19 0.25 3.80 4.00

0.375 REF

o o o S S S G D D D D 6680SC Date Code 578 2 3 4 SOP-8 industrial surface mount application and suited for low The SOP-8 is universally preferred for all commercial voltage applications such as DC/DC converters. 01-Jun-2002 Rev. A Page 1 of 5 S D G RoHS Compliant Product

Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 0.02 1.0 3.0 100 16.8 4.2 8.9 7.3 25.6 18.6 1450 285 180 V V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=15V ID=1A VGS=10V RG=5.5 RD=10 Ω Ω ID=11.5A VDS=15V VGS=5V VGS=10V, ID=11.5A VGS=4.5V, ID=9.5A VGS=0V, ID=250uA VGS= 25A ± VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA Reference to 25 , ID=1mA Forward Transconductance Gfs S30 VDS=15V, ID=11.5A_ C o C o C o C o Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) o Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VDS __ IS=3 5. A,VGS=0V,Tj=25 CV1.3 Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse width 300us, dutycycle 2%.≦≦ Continuous Source Current (Body Diode) VD=VG=0V, VS=1.3V _ _Is A1.92 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 3.Surface mounted on 1 inch2 copper pad of FR4 board; 125 when mounted on min. copper pad.°C/W Elektronische Bauelemente SSG6680 11.5A, 30V,RDS(ON) 11m N-Channel Enhancement Mode Power Mos.FET Ω

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 Characteristics Curve Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Elektronische Bauelemente SSG6680 11.5A, 30V,RDS(ON) 11m N-Channel Enhancement Mode Power Mos.FET Ω

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Elektronische Bauelemente SSG6680 11.5A, 30V,RDS(ON) 11m N-Channel Enhancement Mode Power Mos.FET Ω

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Elektronische Bauelemente SSG6680 11.5A, 30V,RDS(ON) 11m N-Channel Enhancement Mode Power Mos.FET Ω