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Technical content

5.2 A, 100 V , RDS(ON) 78 m

N-Ch Enhancement Mode Power MOSFET 17-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management In portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOIC-8 saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V ID @ TA = 25°C 5.2 A Continuous Drain Current 1 ID @ TA = 70°C 3.9 A Pulsed Drain Current 2 I DM 50 A Continuous Source Current (Diode Conduction) 1 I S 2.3 A PD @ TA = 25°C 3.1 W Total Power Dissipation 1 PD @ TA = 70°C 2.2 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 t 5 sec≦ RθJC 25 °C / W Thermal Resistance Junction-ambient (Max.) 1 t 5 sec≦ RθJA 50 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

N-Ch Enhancement Mode Power MOSFET 17-Dec-2010 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage V GS(th) 1 - - V V DS= VGS, ID=-250μA Gate-Body Leakage Current I GSS - - ±100 nA V DS= 0V, VGS=20V - - 1 μA V DS=80V, VGS=0V Zero Gate Voltage Drain Current I DSS - - 25 μA V DS=80V, VGS=0V, TJ=55°C On-State Drain Current 1 I D(on) 20 - - A V DS=5V, VGS=10V - - 78 V GS=10V, ID=5.2A Drain-Source On-Resistance 1 R DS(ON) - - 92 mΩ VGS=4.5V, ID=4.8A Forward Transconductance 1 g fs - 40 - S V DS=15V, ID=5.2A Diode Forward Voltage V SD - 0.7 - V I S=2.3A, VGS=0V Dynamic 2 Total Gate Charge Q g - 12.5 - Gate-Source Charge Q gs - 2.6 - Gate-Drain(“Miller”) Charge Q gd - 4.6 - nC ID=5.2A VDS=15V VGS=4.5V Switching Turn-On Delay Time T d(on) - 20 - Rise Time T r - 9 - Turn-Off Delay Time T d(off) - 70 - Fall Time T f - 20 - nS VDD=25V ID=1A VGEN=10V RL=25Ω Notes 1. Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not s ubject to production testing.