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Technical content

9.7 A, 60 V , RDS(ON) 22 m

N-Ch Enhancement Mode Power MOSFET 20-Nov-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SOP-8 saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

SOP-8 2.5K 13’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V TA = 25°C I D 9.7 A Continuous Drain Current 1 TA = 70°C I D 8 A Pulsed Drain Current 2 I DM 50 A Continuous Source Current (Diode Conduction) 1 I S 4.1 A TA = 25°C P D 3.1 W Total Power Dissipation 1 TA = 70°C P D 2.2 W Operating Junction & Storage Temperature Range T J, TSTG -55 ~ 150 °C THERMAL RESISTANCE RATINGS t ≦ 10 sec 40 °C / W Maximum Junction to Ambient 1 Steady State RθJA 80 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D 0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. G S S S D D D D

N-Ch Enhancement Mode Power MOSFET 20-Nov-2013 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS= VGS, ID= 250μA Gate-Body Leakage I GSS - - ±100 nA V DS= 0V, VGS=±20V - - 1 μA V DS= 48V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - 25 μA V DS= 48V, VGS= 0V, TJ= 55°C On-State Drain Current 1 I D(on) 20 - - A V DS= 5V, VGS= 10V - - 22 V GS= 10V, ID= 7.8A Drain-Source On-Resistance 1 R DS(ON) - - 26 mΩ VGS= 4.5V, ID= 7.2A Forward Transconductance 1 g fs - 8 - S V DS= 15V, ID= 7.8A Diode Forward Voltage V SD - 0.7 - V I S= 2.1A, VGS= 0V Dynamic 2 Input Capacitance C iss - 1443 - Output Capacitance C oss - 125 - Reverse Transfer Capacitance C rss - 123 - pF VGS=0 VDS=15V f =1MHz Total Gate Charge Q g - 14 - Gate-Source Charge Q gs - 4.3 - Gate-Drain Charge Q gd - 6.8 - nC ID= 7.8A VDS= 30V VGS= 4.5V Turn-On Delay Time T d(on) - 6 - Rise Time T r - 9 - Turn-Off Delay Time T d(off) - 53 - Fall Time T f - 17 - nS VDD= 30V ID= 7.8A VGEN= 10V RL= 3.9Ω RGEN= 6Ω Notes: 1 Pulse test ：PW ≦ 300 μs duty cycle ≦ 2%. 2 Guaranteed by design, not s ubject to production testing.

N-Ch Enhancement Mode Power MOSFET 20-Nov-2013 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

N-Ch Enhancement Mode Power MOSFET 20-Nov-2013 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES