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Technical content
-8A, -30V , RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET 01-Mar-2011 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G 4435SC = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4435 provide the designer with the best combination of fast switch ing, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Low on-resistance Simple Drive Requirement Fast switching MARKING
PACKAGE INFORMATION
SOP-8 3K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V TA = 25°C -8 Continuous Drain Current 3 TA = 70°C ID A Pulsed Drain Current 1.2 I DM -50 A Power Dissipation P D 2.5 W Maximum Junction to Ambient 3 R θJA 50 °C / W Linear Derating Factor 0.02 W / °C Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C SOP-8 A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45 ° D0 ° 8 ° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. S S S GD D D D
-8A, -30V , RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET 01-Mar-2011 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BV DSS -30 - - V V GS=0, ID=-250μA Breakdown Voltage Temp. Coefficient BV△ DS/T△ j - -0.037 - V / °C Reference to 25°C, I D= -1mA Gate-Threshold Voltage V GS(th) -1 - -3 V V DS=VGS, ID= -250μA Forward Transfer Conductance G fs - 20 - S V DS= -10V, ID= -8A Gate-Body Leakage I GSS - - ±100 nA V GS=±20V TA = 25°C - - -1 μA V DS= -30V, VGS=0 Zero Gate Voltage Drain Current TA = 70°C IDSS - - -5 μA V DS= -24V, VGS=0 - - 20 V GS= -10V, ID= -8A Drain-Source On-Resistance 2 R DS(ON) - - 35 mΩ VGS= -4.5V, ID= -5A Total Gate Charge 2 Q g - 12.4 - Gate-Source Charge Q gs - 3.4 - Gate-Drain (“Miller”) Charge Q gd - 5.1 - nC ID= -12A VDS= -20V VGS= -4.5V Turn-On Delay Time 2 T d(on) - 24.2 - Rise Time T r - 23.8 - Turn-Off Delay Time T d(off) - 58.2 - Fall Time T f - 9 - nS VDS= -15V ID= -1A VGS= -10V RG=3.3Ω Input Capacitance C iss - 1345 - Output Capacitance C oss - 194 - Reverse Transfer Capacitance C rss - 158 - pF VGS=0 VDS= -15V f=1.0MHz Source-Drain Diode Forward On Voltage 2 V DS - -0.75 -1.2 V I S= -2.1A, VGS=0, Tj=25°C Continuous Source Current (Body Diode) Is - - -2.1 A V D=VG=0V, VS= -1.2V Pulsed Source Current (Body Diode) 1 ISM - - -50 A Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width ≦300us, duty cycle≦2%.
3 Surface mounted on 1 in
copper pad of FR4 board; 125°C/W when mounted on min. copper pad.
-8A, -30V , RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET 01-Mar-2011 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE
-8A, -30V , RDS(ON) 20m P-Channel Enhancement Mode Power MOSFET 01-Mar-2011 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE