SRF30100CT ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 SchottkyBarrierRectifier SRF30100CT
FEATURES
- SchottkyBarrierChip
- LowPower Loss/HighEfficiency
- High currentcapability
- lowforwardvoltage drop
- High surgecapability
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforlow-voltage,highfrequency inverters，freewheeling and polarrityprotection applications. ABSOLUTE MAXIMUMRATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM PeakRepetitiveReverseVoltage 100 V IF(AV) AverageRectifiedForwardCurrent (RatedVR)TC=95℃ 30 A IFSM NonrepetitivePeakSurgeCurrent (Surgeappliedatratedloadconditionshalf- wave,singlephase,60Hz) 300 A IRRM PeakRepetitiveReverseSurgeCurrent 0.5 A TJ JunctionTemperature -65~150 ℃ Tstg StorageTemperatureRange -65~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 SchottkyBarrierRectifier SRF30100CT THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 2.0 ℃/W ELECTRICALCHARACTERISTICS(PulseTest:PulseWidth=300μs,DutyCycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF MaximumInstantaneousForwardVoltage IF=15A;TC=25℃ 0.85 V IR MaximumInstantaneousReverseCurrent RatedDCVoltage,TC=25℃ RatedDCVoltage,TC=100℃ 0.5 50 mA