SPW52N50C3 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscN-ChannelMOSFETTransistor SPW52N50C3 ISPW52N50C3
- FEATURES
- Staticdrain-source on-resistance: RDS(on)≤70mΩ
- Enhancementmode:
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- DESCRITION
- ImprovedTransconductance
- ABSOLUTEMAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 500 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous 52 A IDM DrainCurrent-SinglePulsed 156 A PD TotalDissipation@TC=25℃ 417 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-casethermalresistance 0.3 ℃/W Rth(j-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscN-ChannelMOSFETTransistor SPW52N50C3 ISPW52N50C3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 500 V VGS(th) GateThresholdVoltage VDS=VGS;ID=2700μA 2.1 3.9 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=30A 70 mΩ IGSS Gate-SourceLeakageCurrent VGS=20V;VDS=0V 0.1 μA IDSS Drain-SourceLeakageCurrent VDS=500V;VGS=0V 25 μA VSD Diodeforwardvoltage IF=Is,VGS =0V 1.2 V