SPLBS81-6 OSRAM

Document overview

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Technical content

Features

 Un-mounted monolithic linear array  75 emitter (82.5% fill-factor) design  Recommended optical power 100 W  Typical conversion efficiency 45 %  High efficiency and re liable MOVPE-grown quantum-well structure  Standard wavelength selection is ± 3 nm  Other pulse peak wavelengths are available upon request  Solderable p- and n-side metallization

Applications

 Recommended for quasi continuous wave (qcw)- applications  Pumping of solid state lasers  Direct material processing  Heating, illumination  Medical applications  Printing applications Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 “Safety of laser products”.

Leistung1) Power1) Wellenlänge2) Wavelength2) Bestellnummer Ordering Code SPL BS81-6 100 804 nm Q62702P1719 1) Empfohlene Leistung setzt einen thermischen Widerstand von Rth < 0.5 K/W voraus. Recommended optical power implies a thermal resistance of Rth < 0.5 K/W. 2) Mittlere Wellenlänge bei 1 μs Pulsbreite und 4 kHz Wiederholfrequenz eines unmontierten Barren. Andere Wellenlängen oder Toleranzen auf Anfrage erhältlich. Pulsed peak wavelength at 1 μs pulse width and 4 kHz repetition rate refer to measurement on an unmonted laser bar. Other peak wavelengths or tolerances are available on request. Kennwerte (TA = 25 °C)1) Characteristics1) Bezeichnung Parameter Symbol Symbol Wert Values Einheit Unit min. typ. max. Empfohlene Ausgangsleistung Recommended output power Pop - 100 qcw - W Zerstörgrenze Catastrophic optical damage limit PCOD 270 350 - W Schwellstrom Threshold current Ith - 19 25 A Betriebsstrom 2) Operatiing current 2) Iop - 110 120 A Differentielle Quanten-Effizienz2) Differential quantum efficiency2) η 1.0 1.1 - W / A Gesamter Konversionswirkungsgrad 2)3) Total conversion efficiency2) 3) ηtot 40 45 - % Strahldivergenz schnelle Achse(1/e²)2) Beam divergence fast axis(1/e²)2) θ⊥ - 70 75 Grad deg. Strahldivergenz langsame Achse(1/e²)2) Beam divergence slow axis(1/e²)2) θII - 12 15 Grad deg. Zentrale Impulswellenlänge2) Standard pulse center wavelength2) λpulse 801 804 807 nm Spektrale Breite (Halbwertsbreite)2) Spectral width (FWHM)2) Δλ - 3 5 nm TE Polarisation 2) TE Polarization 2) PTE - 90 - %

1) Alle Kenn- und Grenzwerte beziehen sich auf Pulsmessungen (1 μs Pulsbreite bei 4 kHz Wiederholfrequenz) an unmontierten Barren. Die Erzielung der spezifizierten Werte im CW – Modus (Dauer strichbetrieb) setzt eine geeignete Montagetechnik mit ei nem thermischen Widerstand von Rth< 0.5 K/W voraus. Die zentrale Emissionswellenlänge im Betrieb ist abhängig vom Betriebsmodus: CW – Betrieb (Dauerstrichbetrieb) oder Impuls, Betriebstemperatur , thermischer Widerstand Rth und ist in aller Regel höher als die spezifizierte Impulswellenlänge λpulse (1 μs Pulsbreite bei 4 kHz Wiederholfrequenz). Alle Parameter können im jeweiligen Betriebsmodus von den spezifizierten Kennwerten abweichen. All characteristics and limitations refer to pulsed measurements (1 μs pulse width at 4 kHz repetition rate) on unmounted laser bars. All specified values in CW - Mode (continuous wave) implies a suitable mounting technology with a thermal resistance of Rth< 0.5 K/W. The operating peak em ission wavelength depends on the operating mode: CW or pulsed, ambient temperature and thermal resistance Rth. The operating peak emission wavelength in general is higher than the specified pulsed peak wavelength λpulse (1 μs pulse width at 4 kHz repetition rate). All characteristics obtained in the operating mode may differ from the characteristics specified herein. 2) Spezifiziert bei der typischen optischen Ausgangsleistung Pop, typ Specified at the typical, optical output power Pop, typ 3) Der spezifizierte Wert für den Konversionswirkungsgrad setzt eine homogene Strominjektion voraus The specified typical efficiency is reached under conditions of homogeneous current injection Dimensionen Dimensions Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit min. typ. max. Emitteranzahl Number of emitters n - 75 - Kontaktbreite je Emitter Single emitter contact width w - 110 - μm Emitterabstand Emitter pitch p - 130 - μm Packungsdichte Filling factor F - 82.5 - % Barrenbreite Bar width W 9.9 10 10.1 mm Barrenhöhe Bar height H 105 115 125 μm Resonatorlänge Resonator length L 590 600 610 μm

OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserv ed. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of tr ansport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or system s must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.