SPL-LL90-3

SPL-LL90-3 OSRAM

Document overview

• Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power Version 1.2 SPL LL90_3

Ordering Information

Features: Low cost, small size plastic package

• Integrated FET and capacitors for pulse control
• Strained InAIGaAs/GaAs QW-structures
• High power large-optical-cavity laser structure
• Nanostack laser technology including multiple epita xially stacked emitters
• The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualific ation for Automotive Grade Discrete Semiconductors.
• High-speed operation (< 30 ns pulse width)
• Low supply voltage (< 20 V)

Applications

• Security, surveillance
• Illumination, ignition
• Testing and measurement Notes Depending on the mode of operation, these devices e mit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which i ncorporate these devices have to follow the safety precautions given in IEC 60825-1 "Safety of laser p roducts". Type: Number of emitters Peak wavelength Peak output power Ordering Code λpeak Popt SPL LL90_3 3 905 70 Q65110A1009

Version 1.2 SPL LL90_3 Maximum Ratings (short time operation / kurzzeitiger Betrieb, T A = 25 °C) Characteristics (TA = 25 °C) Parameter Symbol Values Unit Peak output power P peak 80 W Charge voltage (VG = 15 V) VC 20 V Gate voltage VG -20 ... 20 V Duty cycle dc 0.1 % Operating temperature T op -40 ... 100 °C Junction temperature 1) page 7 Tj 105 °C Storage temperature range T stg -40 ... 100 °C Soldering temperature (tmax = 10 s) Ts 260 °C Parameter Symbol Values Unit min typ max Emission wavelength 2) page 7 λpeak 895 905 915 nm Spectral width (FWHM) 2) page 7 ∆λ 7 nm Peak output power 2) page 7 Popt 60 70 80 W Charge voltage at laser threshold U C, th 4 4.5 5 V Pulse width (FWHM) 2) page 7 , 3) page 7 tP 37 40 43 ns Rise time 2) page 7 , 3) page 7 tr 7 10 13 ns Fall Time 2) page 7 , 3) page 7 tf 40 45 50 ns Jitter (regarding trigger signal and optical pulse) tj 170 500 ps Aperture size w x h 200 x 10 µm x µm Beam divergence (FWHM) parallel to pn-junction 2) page 7 Θ|| 12 15 18 ° Beam divergence (FWHM) perpendicular to pn-junction 2) page 7 Θ⊥ 27 30 33 ° Temperature coefficient of wavelength ∆λ / ∆T 0.3 0.33 nm / K Thermal resistance Rth 200 K / W Switch on gate voltage VG on 5 V

Version 1.2 SPL LL90_3 2017-05-24 3 Optical Output Power vs. Charge Voltage Popt = f(V C), t p = 30 ns Relative Spectral Emission Irel = f(λ), P opt = 70 W, t p = 30 ns Far-Field Distribution Parallel to pn-Junction Irel = f(Θ II ), P opt = 70 W, t p = 30 ns Far-Field Distribution Perpendicular to pn-Junction Irel = f(Θ ⊥ ), P opt = 70 W, t p = 30 ns V Popt OHL01909 C 5 10 15 20 25 V W 1 kHz 25 kHz 860 OHL01910 relI λ 880 900 920 nm 940 100 -400 OHL01906 relI θ -30 -20 -10 0 10 20 Deg 40 0.25 0.50 0.75 1.00 -400 OHL01907 relI θ -30 -20 -10 0 10 20 Deg 40 0.25 0.50 0.75 1.00

Version 1.2 SPL LL90_3 Optical Output Power vs. Charge Voltage Popt = f(V C), tp = 30 ns, PRF = 1 kHz Max. Charge Voltage vs. Ambient Temperature VCmax = f(T A), t p = 30 ns, V C ≤ 19 V, chip temp. ≤ 105 °C Peak Output Power at Max. Charge Voltage vs. Ambient Temperature Popt = f(T A), t p = 30 ns V Popt OHL01908 C 5 10 15 20 25 V W TA = -40 ˚C -20 ˚C 0 ˚C 20 ˚C 40 ˚C 60 ˚C 80 ˚C 100 ˚C -400 T VC max OHL01904 A 40 kHz 10 kHz 20 kHz 30 kHz -20 0 20 40 60 80 ˚C 120 V -400 T Popt OHL01905 A 40 kHz 10 kHz 1 kHz 20 kHz 30 kHz W -20 0 20 40 60 80 ˚C 120

Version 1.2 SPL LL90_3 2017-05-24 5 Package Outline Dimensions in mm (inch). GWOY7046 25.2 (0.992) 24.2 (0.953) 1 2 3 0.5 (0.020) 1.8 (0.071) 1.2 (0.047) (2.35 (0.093)) Surface not flat C C D S G Laser diode Trigger G C FET GND Laser Diode spacing 2.54 (0.100) 0.6 (0.024) 0.4 (0.016) -0.25 (0.010) ±0.1 (0.004) R0.3 (0.012) R0.25 (0.010) V V spacing 1.27 (0.050) 0˚±5˚ ref. to leadframe centerline

Version 1.2 SPL LL90_3 Disclaimer Language english will prevail in case of any discre pancies or deviations between the two language word ings. Attention please! The information describes the type of component and shall not be considered as assured characteristics . Terms of delivery and rights to change design reser ved. Due to technical requirements components may c ontain dangerous substances. For information on the types in question please con tact our Sales Organization. If printed or downloaded, please find the latest ve rsion in the Internet. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport . For packing material that is returned to us unsorted or which w e are not obliged to accept, we shall have to invoi ce you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components* may only be used in life-suppo rt devices** or systems with the express written ap proval of OSRAM OS. *) A critical component is a component used in a li fe-support device or system whose failure can reaso nably be expected to cause the failure of that life-support device or system, or to affect its safety or the ef fectiveness of that device or system. **) Life support devices or systems are intended (a ) to be implanted in the human body, or (b) to supp ort and/or maintain and sustain human life. If they fail, it i s reasonable to assume that the health and the life of the user may be endangered.

Version 1.2 SPL LL90_3 2017-05-24 7 Glossary 1) Junction temperature: Limited due to plastic package, not due to laser ch ip. 2) Standard operating conditions: > 50 ns pulse width, 1 kHz pulse repetition rate, 1 8.5 V charge voltage, 15 V gate voltage and 25 °C ambient temperature. The las er is driven by the MOSFET driver Elantec EL7104C. 3) Switching speed: Switching speed at gate depends on current and spee d, charging the gate capacitance (typ. 300 pF) of the internal transistor. Reduced pulse w idths, rise and fall times occur at trigger pulse w idths < 50 ns. This also reduces the optical peak power.

Version 1.2 SPL LL90_3 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.