SPA11N60C3 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor SPA11N60C3
- FEATURES
- Newrevolutionary highvoltagetechnology
- Ultralow gatecharge
- Highpeak current capability
- Improvedtransconductance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage(f>1Hz) ±30 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 7 A IDM DrainCurrent-SinglePulsed 33 A PD TotalDissipation 33 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 3.8 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor SPA11N60C3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 600 V VGS(th) GateThresholdVoltage VDS=±30V;ID=0.5mA 2.1 3.9 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=7A 340 380 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=600V;VGS=0V；TJ=25℃ TJ=125℃ 100 μA VSDF Diodeforwardvoltage ISD=20.7A,VGS =0V 1.2 V