SMT820 ETC1
Document overview
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Technical content
SMT820 High Performance Infrared TOP IR LED SMT820 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 15mW typical of output power. It emits a spectral band of radiation at 820nm. ♦Outer dimension（Unit:mm） ♦Specifications 1) Product Name TOP IR LED 2) Type No. SMT820 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 820 ｎｍ ｔｙｐ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin ♦Absolute Maximum Rating ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C ♦Electro-Optical Characteristics [Ta=25°C] Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage V F IF=50mA 1.60 1.80 V Reverse Current I R VR=5V 10 uA Total Radiated Power P O IF=50mA 8.0 15.0 mW Radiant Intensity I E IF=50mA 3.0 6.0 mW/sr Peak Wavelength λP IF=50mA 820 nm Half Width ∆λ IF=50mA 40 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 60 ns Fall Time tf ＩF=50mA 40 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512. Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation P D 190 mW Ta=25°C Forward Current I F 100 mA Ta=25°C Pulse Forward Current I FP 500 mA Ta=25°C Reverse Voltage V R 5 V Ta=25°C Operating Temperature T OPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature T SOL 240 °C