SMT810 ETC1
Document overview
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Technical content
SMT810 High Performance Infrared TOP IR LED SMT810 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 10mW typical of output power. It emits a spectral band of radiation at 810nm. ♦Outer dimension（Unit:mm） ♦Specifications 1) Product Name TOP IR LED 2) Type No. SMT810 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 810ｎｍ ｔｙｐ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin ♦Absolute Maximum Rating Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 190 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 3 seconds at 230°C ♦Electro-Optical Characteristics [Ta=25°C] Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.60 1.80 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 5.0 10.0 mW Radiant Intensity IE IF=50mA 3.0 6.0 mW/sr Peak Wavelength λP IF=50mA 810 nm Half Width Δλ IF=50mA 40 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 60 ns Fall Time tf ＩF=50mA 40 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512. Marubeni America Corporation
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