SMT720 ETC2
Document overview
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Technical content
SMT720 High Performance Infrared TOP IR LED SMT720 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 10 mW typical of output power. It emits a spectral band of radiation at 720 nm. Outer dimension (Unit: mm) Specifications 1) Product Name TOP IR LED 2) Type No. SM T720 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 720 nm typ. 4) Package (1) Lead Frame Die Silver P lated (2) Package Resin PPA R esin (3) Lens Epoxy R esi n Absolute Maximum Rating ‡ Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs. ‡ Soldering condition: Soldering condition must be completed within 3 seconds at 26 0° C Electro - Optical Characteristics [ Ta=25 ° C] Item Symbol Condition Minimum Typical Maximum Unit Fo r ward Voltage V F IF = 5 0 mA 1.90 2.30 V Reverse Current IR V R =5V 10 uA Total Radiated Power P O IF = 50mA 5.0 10.0 mW Radiant Intensity IE IF = 50mA 2.0 5.0 mW /sr Peak Wavelength lP IF = 5 0 mA 720 nm Half Width Dl IF = 5 0 mA 20 nm Viewing Half Angle Q1/2 IF = 5 0 mA ± 55 deg. Rise Time tr IF =50mA 80 ns Fall Time tf IF =50mA 80 ns ‡ Total Radiated Power is measured by Photodyne #500 ‡ Radiant Intensity is measured by Tektronix J - 6512. Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation P D 100 mW Ta = 25°C Fo r ward Current IF 50 mA Ta = 25°C Pulse Forward Current IFP 200 m A Ta = 25°C Reverse Voltage V R 5 V Ta = 25°C Operating Temperature T O PR - 2 0 ~ + 80 ° C Storage Temperature T STG - 30 ~ + 80 ° C Soldering Temperature T SOL 240 ° C