SMK0990CI ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor SMK0990CI
- FEATURES
- Newrevolutionary highvoltagetechnology
- WithTO-3PNpackage
- Drain-Sourcebreakdown voltage:BVDSS=900V(Min.)
- Lowdrain-sourceOnresistance: RDS(on)=1.4Ω (Max.)
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 900 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 5.7 A IDM DrainCurrent-SinglePulsed 36 A PD TotalDissipation 130 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.96 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 40 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor SMK0990CI ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 900 V VGS(th) GateThresholdVoltage VDS=±30V;ID=0.25mA 3 5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=4.5A 1.12 1.4 Ω IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=900V;VGS=0V；TJ=25℃ TJ=125℃ 100 μA VSDF Diodeforwardvoltage ISD=9.5A,VGS =0V 1.4 V