SMB108J40CA VISHAY

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 6

Technical content

SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor Revision: 20-Jul-2020 1 Document Number: 89424 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Power Density Surface-Mount TRANSZORB® Transient Voltage Suppressors LINKS TO ADDITIONAL RESOURCES

FEATURES

  • Low profile package
  • Ideal for automated placement
  • Glass passivated pellet chip junction
  • Available in unidirectional and bidirectional
  • Excellent clamping capability
  • Very fast response time
  • Low incremental surge resistance
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLCIATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD22-B102 M3 suffix meets JESD 201 class 2 whisker test Polarity: for unidirectional types the color band denotes cathode end, no marking on bidirectional types Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal PRIMARY CHARACTERISTICS VBR (unidirectional) 6.4 V to 49.1 V VBR (bidirectional) 6.4 V to 49.1 V VWM 5.0 V to 40 V PPPM (unidirectional) 1000 W PPPM (bidirectional) 800 W IFSM (unidirectional only) 100 A TJ max. 150 °C Polarity Unidirectional, bidirectional Package SMB (DO-214AA) SMB (DO-214AA) 333DDD3 D 3D Models MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) unidirectional PPPM (1)(2) 1000 W bidirectional 800 Peak pulse current with a 10/1000 μs waveform I PPM (1) See next table A Peak forward surge current 8.3 ms single half sine-wave unidirectional only I FSM (2) 100 A Operating junction and storage temperature range T J, TSTG -55 to +150 °C

SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor Revision: 20-Jul-2020 2 Document Number: 89424 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 UNIDIRECTIONAL Notes (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (4) VF = 3.5 V at IF = 50 A (uni-directional only) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (V) (1) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM PEAK PULSE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V)MIN. MAX.

SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor Revision: 20-Jul-2020 3 Document Number: 89424 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BIDIRECTIONAL Notes (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 Note (1) Mounted on minimum recommended pad layout ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (V) (1) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) (3) MAXIMUM PEAK PULSE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V)MIN. MAX. THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient R θJA (1) 72 °C/W Typical thermal resistance, junction to lead R θJL 20 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMB10J5.0A-M3/52 0.106 52 750 7" di ameter plastic tape and reel SMB10J5.0A-M3/5B 0.106 5B 3200 13" di ameter plastic tape and reel

SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor Revision: 20-Jul-2020 4 Document Number: 89424 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 3 - Pulse Waveform Fig. 4 - Typical Junction Capacitance Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Forward Surge Current SMB8J5.0C - SMB8J40CA SMB10J5.0 - SMB10J40A 0.1 100 Copper Pad Areas 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms P PPM - Peak Pulse Power (kW) td - Pulse Width (s) 0 25 50 75 100 100 125 150 175 200 TJ - Initial Temperature (°C) Peak Pulse Power (P PP ) or Current (I PP Derating in Percentage, % 100 150 td 0 1.0 2.0 3.0 4.0 IPPM - Peak Pulse Current, % I RSM t - Time (ms) tr = 10 µs Peak Value I PPM Half Value - I PPM IPP 10/1000 µs Waveform as defined by R.E.A. TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of I PPM 100 1000 10 000 101 Bi-Directional 100 200 TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p Measured at Zero Bias V R, Measured at Stand-Off Voltage V WM C J - Junction Capacitance (pF) VWM - Reverse Stand-Off Voltage (V) 1.0 100 0.01 0.1 10 1 100 1000 tp - Pulse Duration (s) Transient Thermal Impedance (°C/W) 200 100 1001 10 Number of Cycles at 60 Hz Peak Forward Surge Current (A) 8.3 ms Single Half Sine-Wave Uni-Directional Only

SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor Revision: 20-Jul-2020 5 Document Number: 89424 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Cathode Band SMB (DO-214AA) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) Mounting Pad Layout 0.086 (2.18) MIN. 0.060 (1.52) MIN. 0.085 (2.159) MAX. 0.220 (5.59) REF.

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