SMB10J40A VISHAY

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
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Technical content

SMB10(8)J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor Document Number: 88422 Revision: 22-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com , PDD-Asia@vishay.com , PDD-Europe@vishay.com www.vishay.com High Power Density Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES

  • Low profile package  Ideal for automated placement  Glass passivated chip junction  Available in uni-directional and bi-directional  Excellent clamping capability  Very fast response time  Low incremental surge resistance  Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C  Solder dip 260 °C, 40 s  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS co mpliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types PRIMARY CHARACTERISTICS VWM 5.0 V to 40 V PPPM (uni-directional) 1000 W PPPM (bi-directional) 800 W IFSM (uni-directional only) 100 A TJ max. 150 °C DO-214AA (SMB) Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) uni-directional bi-directional PPPM 1000 800 W Peak pulse current with a 10/1000 µs waveform (1) I PPM See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) I FSM 100 A Operating junction and storage temperature range T J, TSTG - 55 to + 150 °C

SMB10(8)J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com , PDD-Asia@vishay.com , PDD-Europe@vishay.com Document Number: 88422 Revision: 22-Oct-082 UNI-DIRECTIONAL Notes: (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (4) VF = 3.5 V at IF = 50 A (uni-directional only) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V)MIN. MAX.

SMB10(8)J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor Document Number: 88422 Revision: 22-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com , PDD-Asia@vishay.com , PDD-Europe@vishay.com www.vishay.com BI-DIRECTIONAL Notes: (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (1) (V) TEST CURRENT AT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) (3) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (A) (2) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V)MIN. MAX.

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