SL1002 ISC

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Technical content

Page 1

Silicon NPN Power Darlington Transistor

SL1002

PDF page 1 diagram

DESCRIPTION

  • High current output up to 3A
  • Low saturation voltage

APPLICATIONS

  • Audio power amplifier
PDF page 1 diagram
SYMBOL PARAMETER VALUE UNIT
V CBO Collector-Base Voltage 40 V
V CEO Collector-Emitter Voltage 30 V
V EBO Emitter-Base Voltage 5 V
I C Collector Current-Continuous 3 A
P C Collector Power Dissipation T =25℃ C 1.5 W
T J Junction Temperature 150 ℃
Tstg Storage Temperature Range -55~150 ℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V CEO Collector-Emitter Breakdown Voltage I = 1mA; I = 0A C B 30 -- -- V
V CBO Collector-base breakdown voltage I = 100uA; I = 0A C E 40 V
V EBO Emitter-base breakdown voltage I = 100uA; I = 0A E C 5 V
V CE(sat) Collector-Emitter Saturation Voltage I = 2A; I = 0.2A C B -- -- 0.5 V
V BE(sat) Base-emitter saturation voltage I = 2A; I = 0.2A C B -- -- 2.0 V

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Page 2

Silicon NPN Power Darlington Transistor

SL1002

I CEO Collector Cutoff Current V = 30V; I = 0 CE B -- -- 1 uA
I EBO Emitter Cutoff Current V = 5V; I = 0 EB C -- -- 1 mA
h FE DC Current Gain I = 20mA; V = 2V C CE 80 -- --
h FE DC Current Gain I = 1A; V = 2V C CE 100 -- 400
PDF page 2 diagram

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