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Document overview
- PDF pages: 2
Technical content
Page 1
isc N-Channel MOSFET Transistor
SKI04033
FEATURES
- Drain Current –ID= 80A@ TC=25℃
- Drain Source Voltage-
| SYMBOL | PARAMETER | VALUE | UNIT |
|---|---|---|---|
| V DSS | Drain-Source Voltage | 40 | V |
| V GS | Gate-Source Voltage-Continuous | ±20 | V |
| I D | Drain Current-Continuous | 80 | A |
| I DM | Drain Current-Single Pluse | 161 | A |
| P D | Total Dissipation @T =25℃ C | 116 | W |
| TJ | Max. Operating Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55~150 | ℃ |
THERMAL CHARACTERISTICS
| SYMBOL | PARAMETER | MAX | UNIT |
|---|---|---|---|
| Rth j-c | Thermal Resistance, Junction to Case | 1.1 | ℃/W |
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Page 2
isc N-Channel MOSFET Transistor
SKI04024
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
| SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
|---|---|---|---|---|---|
| V (BR)DSS | Drain-Source Breakdown Voltage | V = 0; I = 0.1mA GS D | 40 | V | |
| V GS(th) | Gate Threshold Voltage | V = V ; I = 1mA DS GS D | 1.0 | 2.5 | V |
| R DS(on) | Drain-Source On-Resistance | V = 10V; I = 58.5A GS D | 3.9 | mΩ | |
| I GSS | Gate-Body Leakage Current | V = ±20V;V = 0 GS DS | ±100 | nA | |
| I DSS | Zero Gate Voltage Drain Current | V = 40V; V = 0 DS GS | 100 | μA | |
| V SD | Forward On-Voltage | I = 58.5A; V = 0 S GS | 1.5 | V |
