SFT2010

2N4999 ETC

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EVICES INC we D ffsseeo12 oooe107 o ff PRELIMINARY DATA SHEET T-33-/15° ¢ | Dill | 200 AMP Sspil HIGH ENERGY NPN TRANSISTOR 14830 Valley View Avenue La Mirada, California 90638, . (213) 921-9660 Vceo 100, 120, 140 VOLTS TWX 910-583-4807 . FAX 213-921-2396 CASE STYLE R FEATURES : TO—3 WITH .060 PINS @ BVCEO 250 VOLTS MIN @ 600 WATTS POWER DISSIPATION : © EXCELLENT SOA CURVE e Es/b OF 800mT . @ GAIN OF OVER 5 AT 200 AMPS @ HIGH REL CONSTRUCTION INCLUDING GOLD EUTECTIC DIE MOUNTING, ALUMINUM WIRING @ PLANAR CHIP CONSTRUCTION WITH LOW LEAKAGE AND VERY FAST SWITCHING MAXIMUM RATINGS Cee Sree [et “~ }“Caliector - Emitter Voltage - SFT2010 100 Nai SFT2012 120 SFT2014 140 a es ie Pe a Total Device Dissipation © TE= 59S 600 Watts Derate above 50°C 4 wre te weal THERMAL CHARACTERISTICS ce A ELECTRICAL CHARACTERISTICS , Collector - Emitter Breakdown Voltage” SFT2014 140 Collector - Base Breakdown Voltage > Vee ra Io= 100 wade 8Vca0 250 A Emitter - Base Breakdown Voltage 'e= 100 we 8VeB0 Vée NOTE: All specifications subject to change without notice. 6/86 B2273

SOLID STATE DEVICES INC J>33-/5" Dee D fs3be012 ooozzoa 2 ff

ELECTRICAL CHARACTERISTICS

[| __Characteristics OS Symbot [min [Max [unt] Collector Cutoff Current ) Emitter Cutoff Current DC Current Gan (p= 10 Adc, Vop = 2 vee) le= 100 A%VE= 5 Voel {lg = 200 Adc.Vop= 5 Vac) Collector - Emitter Saturation Voltage” (Ig = 120 Age. Ig = 2 Adc) (ig = 200 Adc.ig= 30 Adc) Base - Emitter Saturation Voltage’ figs 120 Adctg= 12 Adc) Vpg isan Current - Gain - Bandwith Product Output Capacitance ee) Vole =O0.t= Ll mia 1200 foe | FB SOA (I, = lde, Ry, = Ry = 20 cis) Esp . “ps(off) = 2.0 vac, L= 1.0 nt) 800 8) (Won = 100Vdc, I, = 0.75Adc) 1 pone | pe | fm | | Weg= 60 Wée.tg= 10 Ate 1500 Fall Time tay = 'g2 = 1.0 Adc) 400 *Pulse Test: Pulse width = 300 us, DutyCycle = 2% PHYSICAL DIMENSIONS _KEY TO DIMENSIONS: (Inches) A= .250 - .450 ay B= .057 - .062 © N Cc = .875 MAX. T a Ig D = .135 MAX. I H be = E = .312 MIN. Fe .205 - .225 £ <M G = 1420 - .440 H = 1.177 - 1.197 P | a re J = 1655 - .675 0 K = .188 MAX. Me= ,151 - .161 N= .525 MAX. . OU = BASE SSD ———— iff Pos ENITTER ) om ba” UU SOLID STATE DEVICES, INC. P.O. Box 577, La Mirada, California 90637 Telephone: (213) 921-9660 + TWX 910-583-4807 + FAX#213-921-2396

SOLID STATE DEVICES INC L2E D ffaaeb011 oooe110 6 Bf 7-33-27 " . 1 14830 Valley View Avenue HIGH VOLTAGE PNP TRANSISTOR) ‘ites: cosonssoe 450—500 VOLTS fees FAX 213-921-2396 CASE STYLE W JEDEC TO-5 FEATURES [30-44 mw Poe ¢ BVCBO TO 500 VOLTS 2B) ie | gt rose | ¢ LOW SATURATION VOLTAGE

260 SS na © LOW LEAKAGE AT HIGH TEMPERATURE

a0 WY Vt © 200°C OPERATING, GOLD EUTECTIC DIE ATTACH stems Ht EMITTER Ken cotter | «© DESIGNED FOR COMPLEMENTARY USE WITH ‘O18 oe bx a 2N5095 THRU 2N5097 : a { i wi Ny 5 © =2N5091 AND 2N5093 ALSO AVAILABLE MAXIMUM RATINGS ~ ‘llector - Emitter Voltage 400 Z0 Volts Rge= 1 KOhms 450 500 Volts [atresia 500 Uk OG [eweciet es fotal Device Dissipation @ TC =100°C 2 Watts Oerate above 100 °C 20 mW/°C [ora Sa Teena 6s eo 00 THERMAL CHARACTERISTICS : Characteristics Symbol [ara nw so Collector - Emitter Breakdown Voltage* 2N5094 | vez | $99 | | vee | Ig= 50 mAde 2N5096 cEo* | 450 Vde 2N5094 450 . Collector - Base Breakdown Voltage 2N5094 450 & (c= 100 ude 2N5096 ®VcB0 500 Emitter - Base Breakdown Voltage (Ig= 20 uAdc) ®Veg9 Vde 1/85 C178T NOTE: All specifications subject to change without notice.

SOLID STATE DEVICES INC T-33-/7 lee D JJsseec12 0002111 2 I Colector Cutof Curent” on5Q94 VCB= 450 Vde 2N5096 VCB= 500 Vde Emitter Cutoff Current DC Current Gaine (p= 1 made, Vop = 10 Vide) 20 200 (ig = 25 mad Vop= 10 Vide) 40 250 (lg = 100 mAdc,Vop= 15 Vde) 20 200 Collector - Emitter Saturation Voltage* (p= 25 mAdc, Ig = 2.5 made) , Voe «sane 3.0 Base - Emitter Saturation Voltage” (p= 25 mAdc,Ip= 2.5 mado) Current - Gain - Bandwith Product (p= 10 made, Vop= 20 viet = 5 Mi) " Output Capacitance Wop= 15 Ve ie = Of = 2 MHz) SWITCHING TIMES ° were pe] 300 m | Risetine | 1500 ns Fo = 100 made, rs ue igi = 'g2= 10 mAde) 4 ns *Pulse Test: Pulse width = 300 us, DutyCycle = 2% TYPICAL OPERATING CURVES FORWARD BIAS DC SAFE OPERATION AREA Gow CURVE) CURVES APPLY BELOW RATED Yop) Tq * 25°C DISSIPATION DEEATING CURVE te 20 eee Sect eeeemeti mesma a A | | | ‘s PTTTN UL a | i ea) A 10 2 Seo i \\ Se AO | ok pCO NTT es en | DT a a veg C8:UCTON EMITTER vouTACE (LTH DI SSD | SOLID STATE DEVICES, INC. rc P.O. Box 577, La Mirada, California 90637 Telephone: (213) 921-9660 » TWX 910-583-4807 + FAX#213-921-2396

ee ——— SOLID STATE DEVICES INC D2E D Ppeseeo12 oooe1i4 4 I | T- 33-17 : 5 P i € 2N4999 AND 2N5001 en HIGH SPEED PNP TRANSISTOR | Seuzicts, | La Mirada, California 90638 1 (213) 921-9660 {

100 VOLTS race |

CASE STYLE X . JEDEC TO—59 ; FEATURES . ALL TERMINALS ISOLATED FROM CASE . r= aaa ts 1) ease © RADIATION TOLERANT we b a | i ® FAST SWITCHING, 200 NSEC MAX ton ; Bao (38 / i-couscrn ® HIGH FREQUENCY, TYPICAL £,, 100 MHZ : | ‘a . = “| © BVCEO 80 VOLTS MIN arnt | oe (4 ey fk: ® HIGH LINEAR GAIN, LOW SATURATION VOLTAGE UU | poe ee © 200 °c OPERATING, GOLD EUTECTIC DIE ATTACH woe eae CI iS . - © .DESIGNED FOR COMPLEMENTARY USE WITH . emitter! : 2N3996 AND 2N3997 MAXIMUM RATINGS __. : a a OT fem ee | Colecior= Base Vottagy ew | tT [Coleco Goren ee SE Total Oevice Dissipation @ 10 = 50°C 30 Waits Derate above 50 °C , . 200 mwirc srowo| | THERMAL CHARACTERISTICS [aris tome ee ELECTRICAL CHARACTERISTICS - . Collector - Emitter Breakdown Voltage* (c= 100 mage BYceQ* Vide Collector - Base Breakdown Voltage . Vde ( (g= 200 wade , cao 100 . Emutter - Base Breakdown Voltage . (Ig = 200 uAdc) E50 5.5 Ve 1/85" B318G NOTE: All specifications subject to change without notice.

SOLID STATE DEVICES INC T-33-/9 12ze D oeseeo11 ooo2115 T I ELECTRICAL CHARACTERISTICS i [Chaacterstcs «dmb | inex Collector Cutott Current 9 (Wop = 40 Vde) ; Toro 50 \\ Emitter Cutoff Current uAdc Se eT 'VEB = 5.5 Vde mAdc DE Current Gain 33999 20 (ig= 50 mAdeVog= 5 Vee) OATS 36 90 (ig= 2 Ad VoE= 5c) 25001 70 200 = 99 : (lg = 3 Adc. Vog an ONSOD1 is Collector - Emitter Saturation Voltage” : (p= 1 Adclg= 100 mAdc) . Voe (san 0.46 ig= 2 — Adc.lg = 200 mAde) 0.85 Base - Emutter Saturation Voltage" . (p= 1 Adc. tg = 100 = made) Vpe isan 1.2 Vac (p= 2 Adctg= 200 mAde) 1.5 Current - Gain - Bandwith Product N49) Output Capacitance Mg= 10 véeteeot=. 1 yn: 120 ; Base - Emitter Voltage* | ” . ears pee, fe t=] 2 Ic = 2 Ade . ' peeve we Lp bw | | RL = ms: i *Pulse Test: Pulse width = 300 us, DutyCycle = 2% . FORWARD BIAS DC SAFE OPERATION AREA (5.0.4, CURVE) TYPICAL OPERATING CURVES DISSIPATION DERATING CURVE CunMES APTLY BELOW MATID Yegy, Te + 24°C : 40 SS 7) ee ¥ in.- ETT TTT io PCUNCECEA op SCGeeI Suri

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PHS) SES = 8 02 yo LEN SH} SS é Bane — -007 SS SSS g 10 2-90, Eo ee PELE TEN | 3 2 RR is N 2 _o02 nn GAT LTT tt tT tN voor CL LETT FT °o 2 £0 75 100 125 150 175 200 ly 2 4-10 20-40-10 B SSD To-Caw Temparature="C ; } SS i) l| . VcE-Collector-Emitter Voltage-V ‘ SOLID STATE DEVICES, INC. ———— eee P O. Box §77, La Mirada, California 90637 Telephone: (213) 921-9660 + TWX 910-583-4807 + FAX#213-921-2396 .