SFT1202 ISC

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor SFT1202

DESCRIPTION

  • LowCollector-EmitterSaturation Voltage- :VCE(sat)=0.165V(Max)(IC=1A;IB= 0.1A)
  • Fast-Switching speed
  • High allowable powerdissipation
  • Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation

APPLICATIONS

  • DC/DCconverter
  • Relay dirvers
  • Lampdirvers
  • Motordirvers，inverter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 180 V VCEO Collector-EmitterVoltage 150 V VEBO Emitter-BaseVoltage 7 V IC CollectorCurrent-Continuous 2 A ICM CollectorCurrent-Peak 3 A IB BaseCurrent 0.4 A PC CollectorPower Dissipation Ta=25℃ 1 WTotalPowerDissipation @TC=25℃ 15 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃

isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor SFT1202 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)EBO Emitter-BaseBreakdownVoltage IE=10uA,IC=0 7 V V(BR)CEO) Collector-EmitterBreakdownVoltage IC=1mA,IB=0 150 V V(BR)CBO Collector-BaseBreakdown Voltage IC=10uA,IE=0 180 V VCE(sat) Collector-EmitterSaturationVoltage IC=1A;IB=100mA 0.165 V IC=0.5A;IB=50mA 0.1 V VBE(sat) Base-EmitterSaturationVoltage IC=-1A;IB=100mA 1.2 V ICBO CollectorCutoffCurrent VCB=80V;IE=0 1 uA IEBO EmitterCutoffCurrent VEB=4V;IC=0 1 uA hFE DCCurrentGain IC=100mA;VCE=5V 200 560 fT Current-Gain—BandwidthProduct IC=300mA;VCE=10V 140 MHZ COB OutputCapacitance VCB=10V;f=1.0MHz 12 pF SwitchingTimes;ResistiveLoad ton Tur-onTime IC=10A;VCC=75V; IB=-0.5A 50 ns ts StorageTime 1.46 us tf FallTime 70 ns

isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark3 IscSiliconNPNPowerTransistor SFT1202 Outline Drawing