SFH9201

SFH9201 OSRAM

Document overview

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• PDF pages: 10

Technical content

Features

 Optimal operating distance 1 mm to 5 mm  IR-GaAs-emitter in combination with a Silicon NPN phototransistor  Daylight cut-off filter  Low saturation voltage  Emitter and detector electrically isolated  Soldering Methode: IR Reflow Soldering  Preconditioning acc. to JEDEC Level 4

Applications

 Position reporting  End position switch  Speed monitoring and regulating  Motion transmitter

Sender (GaAs-Diode) Emitter (GaAs diode) Sperrspannung Reverse voltage VR 5V Vorwärtsgleichstrom Forward current IF 50 mA Verlustleistung Power dissipation Ptot 80 mW Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage VCE 16 V Kollektor-Emitter-Sperrspannung, (t ≤ 2 min) Collector-emitter voltage, (t ≤ 2 min) VCE 30 Emitter-Kollektor-Sperrspannung Emitter-collector voltage VEC 7 Kollektorstrom Collector current IC 10 mA Verlustleistung Total power dissipation Ptot 100 mW Reflexlichtschranke Light Reflection Switch Lagertemperatur Storage temperature range Tstg – 40 … + 100 °C Umgebungstemperatur Ambient temperature range TA – 40 … + 100 Verlustleistung Power dissipation Ptot 150 mW Elektrostatische Entladung Electrostatic discharge ESD 2 KV Umweltbedingungen / Environment conditions 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3)

Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Sender (IR-GaAs-Diode) Emitter (IR-GaAs diode) Durchlaβspannung Forward voltage IF = 50 mA VF 1.25 (≤ 1.65) V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1) µA Kapazität Capacitance VR = 0 V, f = 1 MHz CO 25 pF Wärmewiderstand1) Thermal resistance1) RthJA 270 K/W Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Kapazität Capacitance VCE = 5 V, f = 1 MHz CCE 10 pF Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V ICEO 3 (≤ 200) nA Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, EV = 1000 Lx IP 3.5 mA Wärmewiderstand1) Thermal resistance1) RthJA 270 K/W

Kodak neutral white test card, 90% Reflexion IF = 10 mA; VCE = 5 V; d = 1 mm ICE min. ICE typ. 0.25 0.70 mA mA Kollektor-Emitter-Sättigungsspannung Collector-emitter-saturation voltage Kodak neutral white test card, 90% Reflexion IF = 10 mA; d = 1 mm; IC = 85 µA VCE sat 0.15 (≤ 0.6) V 1) Montage auf PC-Board mit > 5 mm2 Padgröβe 1) Mounting on pcb with > 5 mm2 pad size Kennwerte (TA = 25 °C) Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit OHM02257 d Reflector with 90% reflexion (Kodak neutral white test card)

Schaltzeiten (TA = 25 °C, VCC = 5 V, IC = 1 mA1), RL = 1 kΩ) Switching Times Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Einschaltzeit Turn-on time tein ton 65 µs Anstiegzeit Rise time tr 50 µs Ausschaltzeit Turn-off time taus toff 55 µs Abfallzeit Fall time tf 50 µs 1) IC eingestellt über den Durchla βstrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) 1) IC as a function of the forward curren t of the emitting diode, the degree of reflection and the distance between reflector and component (d) OHM02258 Ι F VCC RL Ι C Output

Max. Permissible Forward Current IF = f (TA) Forward Voltage (typ.) of the Diode VF = f (T) IC ICmax OHO02255 Ι C d max CΙ 100 1234 m m 5 Kodak neutral white test card Mirror OHL00986 002 0 4 0 6 0 8 0 ˚ C 100 mA FI TA 100 120 OHO02256 T -40 FV -20 0 20 40 60 100 1.05 1.10 1.15 1.20 1.25 1.30 V 5 mA 10 mA Ι F = 20 mA C Permissible Power Dissipation for Diode and Transistor Ptot = f (TA ) Transistor Capacitance (typ.) CCE = f (VCE), TA = 25 °C, f = 1 MHz Relative Spectral Emission of Emitter (GaAs) Irel = f (λ) and Detector (Si) Srel = f (λ) OHL00945 002 0 4 0 6 0 8 0 ˚ C 100 mW totP TA Total power dissipation 100 120 160 Detector Emitter OHO00374 CCE pF VCE -110 010 110 210V OHO00786 Srel λ 700 relΙ 100 800 900 1000 nm 1100 Detector Emitter Switching Characteristics t = f (RL) TA = 25 °C, IF = 10 mA Collector Current IC = f (IF), spacing d to reflector = 1 mm, 90% reflection Output Characteristics (typ.) IC = f (VCE), spacing to reflector: d = 1 mm, 90% reflection, TA = 25 °C OHO00785 t LR 10 1 10 -1 10 2 10 3 s 10 0 10 1kΩ µ Ι C 100 µA t on = 1 mACΙ t off t on t off OHO00783 CΙ mA0 mA FΙ 0.5 1.0 1.5 2.0 2.5 3.0 4 8 12 16 20 =5 VCEV V OHO00781 CE 0.1 Ι C Ι F = 25 mA = 20 mAΙ F = 15 mAΙ F = 10 mAΙ F = 5 mAΙ F 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 mA 2.0

10 V0 10 1

Maßzeichnung Package Outlines Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 3.4 (0.134) 3.0 (0.118) 5.8 (0.228) 6.2 (0.244) 0.15 (0.006) 0.13 (0.005) 2.1 (0.083) 1.7 (0.067) GPLY0504 4.2 (0.165) 3.8 (0.150) 0.3 (0.012) 0.5 (0.020) Raster (spacing) Raster (spacing) (0.1 (0.004) typ.) B A

0.2 M A

0.1 M B

2.54 (0.100) 1.27 (0.050) (5˚) (1.2 (0.047) typ.) (0.4 (0.016) typ.) Empfänger/Receiver Chip Positionen Type 1 2 3 4 5 6 SFH 9201 Anode – Emitter Collector – Cathode

Empfohlenes Lötpaddesign IR-Reflow Löten Recommended Solder Pad IR REflow Soldering Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Solder resist Lötstopplack Cu-area >5 mm Cu-Fläche >5 mm2 OHPY0030 3.9 (0.154) 1.2 (0.047) 1.27 (0.050) 0.6 (0.024) 1.27 (0.050) Paddesign Wärmeableitung for improved für verbesserte Padgeometrie Heat dissipation

Bitte Verarbeitungshinweise für SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! IR-Reflow Lötprofil (nach IPC 9501) IR Reflow Soldering Profile (acc. to IPC 9501) Löthinweise Soldering Conditions Bauform Type Drypack Level acc. to IPS-stand. 020 Tauch-, Schwalllötung Dip, Wave Soldering Reflowlötung Reflow Soldering Kolbenlötung Iron Soldering Peak Temp. (solderbath) Max. Time in Peak Zone Peak Temp. (package temp.) Max. Time in Peak Zone (Iron temp.) OHLY0597 50 100 150 200 2 100 150 200 250 300 T t C s 240-245 C 10-40 s 183 C 120 to 180 s defined for Preconditioning: up to 6 K/s ramp-down rate up to 6 K/s ramp-up rate up to 6 K/s defined for Preconditioning: 2-3 K/s

Gurtung / Polarität und Lage siehe Dokument: Short Form Katalog: Gurtung und Verpackung - SMT-Bauelemente - Gehäuse:SMT RLS Methode of Taping / Polarity and Orientation see document: Short Form Catalog: Tape and Reel - SMT-Components - Package: SMT-RLS Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserv ed. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. Y ou must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or system s must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.