SFH601

SFH601_08 VISHAY

Document overview

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Technical content

Document Number: 83663 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.3, 25-Jan-08 1 Optocoupler, Phototransistor Output, with Base Connection SFH601 Vishay Semiconductors

DESCRIPTION

The SFH601 is an optocoupler with a gallium arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits.

FEATURES

• Isolation test voltage (1.0 s), 5300 VRMS V CEsat 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA  Built to conform to VDE requirements  Highest quality premium device  Long term stability  Storage temperature, - 55 ° to + 150 °C  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS  UL1577, file no. E52744 system code H or J, double protection  DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1  CSA 93751  BSI IEC 60950; IEC 60065 Note For additional information on the available options refer to option information. i179004 B C E A C NC ORDER INFORMATION PART REMARKS SFH601-1 CTR 40 to 80 %, DIP-6 SFH601-2 CTR 63 to 125 %, DIP-6 SFH601-3 CTR 100 to 200 %, DIP-6 SFH601-4 CTR 160 to 320 %, DIP-6 SFH601-1X006 CTR 40 to 80 %, DIP-6 400 mil (option 6) SFH601-1X007 CTR 40 to 80 %, SMD-6 (option 7) SFH601-1X009 CTR 40 to 80 %, SMD-6 (option 9) SFH601-2X006 CTR 63 to 125 %, DIP-6 400 mil (option 6) SFH601-2X007 CTR 63 to 125 %, SMD-6 (option 7) SFH601-2X009 CTR 63 to 125 %, SMD-6 (option 9) SFH601-3X006 CTR 100 to 200 %, DIP-6 400 mil (option 6) SFH601-3X007 CTR 100 to 200 %, SMD-6 (option 7) SFH601-3X009 CTR 100 to 200 %, SMD-6 (option 9) SFH601-4X006 CTR 160 to 320 %, DIP-6 400 mil (option 6) SFH601-4X007 CTR 160 to 320 %, SMD-6 (option 7) SFH601-4X009 CTR 160 to 320 %, SMD-6 (option 9) ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6.0 V DC forward current IF 60 mA Surge forward current t = 10 µs I FSM 2.5 A Total power dissipation P diss 100 mW

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83663 2 Rev. 1.3, 25-Jan-08 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause per manent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requi rements. Typical values ar e characteristics of the device and are the result of eng ineering evaluation. Typical values are for information only and are not part of the testing requirements. OUTPUT Collector emitter voltage V CE 100 V Emitter base voltage V EBO 7.0 V Collector current IC 50 mA t = 1.0 ms I C 100 mA Power dissipation Pdiss 150 mW COUPLER Isolation test voltage between emitter and detector, referred to climate DIN 40046, part 2, Nov. 74 t = 1.0 s V ISO 5300 V RMS Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature range T stg - 55 to + 150 °C Ambient temperature range T amb - 55 to +100 °C Junction temperature Tj 100 °C Soldering temperature (2) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C

ELECTRICAL CHARACTERISTICS

MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 60 mA V F 1.25 1.65 V Breakdown voltage I R = 10 µA V BR 6.0 V Reverse current V R = 6.0 V I R 0.01 10 µA Capacitance V F = 0 V, f = 1.0 MHz C O 25 pF Thermal resistance Rthja 750 K/W OUTPUT Collector emitter capacitance f = 1.0 mHz, V CE = 5.0 V C CE 6.8 pF Collector base capacitance f = 1.0 mHz, V CB = 5.0 V C CB 8.5 pF Emitter base capacitance f = 1.0 mHz, V EB = 5.0 V C EB 11 pF Thermal resistance Rthja 500 K/W Collector emitter leakage current V CE =10 V SFH601-1 I CEO 2.0 50 nA SFH601-2 I CEO 2.0 50 nA SFH601-3 I CEO 5.0 100 nA SFH601-4 I CEO 5.0 100 nA COUPLER Saturation voltage collector emitter I F = 10 mA, IC = 2.5 mA V CEsat 0.25 0.4 V Capacitance (input to output) V I-O = 0, f = 1.0 MHz C IO 0.6 pF ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Document Number: 83663 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.3, 25-Jan-08 3 SFH601 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Note Current transfer ratio and collector emitter leakage current by dash number. Fig. 1 - Linear Operation (Without Saturation) Fi g. 2 - Switching Operation (With Saturation) CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT IC/IF at VCE = 5.0 V IF = 10 mA SFH601-1 CTR 40 80 % SFH601-2 CTR 63 125 % SFH601-3 CTR 100 200 % SFH601-4 CTR 160 320 % IF = 1.0 mA SFH601-1 CTR 13 30 % SFH601-2 CTR 22 45 % SFH601-3 CTR 34 70 % SFH601-4 CTR 56 90 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED Current V CC = 5.0 V, RL = 75 Ω IF 10 mA Rise time V CC = 5.0 V, RL = 75 Ω tr 2.0 µs Fall time V CC = 5.0 V, RL = 75 Ω tf 2.0 µs Turn-on time V CC = 5.0 V, RL = 75 Ω ton 3.0 µs Turn-off time V CC = 5.0 V, RL = 75 Ω toff 2.3 µs SATURATED Current SFH601-1 I F 20 mA SFH601-2 I F 10 mA SFH601-3 I F 10 mA SFH601-4 I F 0.5 mA Rise time SFH601-1 t r 2.0 µs SFH601-2 t r 3.0 µs SFH601-3 t r 3.0 µs SFH601-4 t r 4.6 µs Fall time SFH601-1 t f 11 µs SFH601-2 t f 14 µs SFH601-3 t f 14 µs SFH601-4 t f 15 µs Turn-on time SFH601-1 t on 3.0 µs SFH601-2 t on 4.2 µs SFH601-3 t on 4.2 µs SFH601-4 t on 6.0 µs Turn-off time SFH601-1 t off 18 µs SFH601-2 t off 23 µs SFH601-3 t off 23 µs SFH601-4 t off 25 µs isfh601_01 RL =7 5 Ω VCC = 5 V IC 47 Ω IF IF 1k Ω VCC =5 V 47 Ω isfh601_02

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83663 4 Rev. 1.3, 25-Jan-08 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Note safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Current Transfer Ratio vs. Diode Current Fig. 4 - Current Transfer Ratio vs. Diode Current SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part 1) 55/100/21 Comparative tracking index CTI 175 399 VIOTM 8000 V VIORM 890 V PSO 700 mW ISI 400 mA TSI 175 °C Creepage distance standard DIP-6 7 mm Clearance distance standard DIP-6 7 mm Creepage distance 400 mil DIP-6 8 mm Clearance distance 400 mil DIP-6 8 mm Insulation thickness, reinforced rated per IEC 60950 2.10.5.1 0.4 mm 103 102 100 10-1 101 2mA10055 IFisfh601_03 (TA = - 25 ˚C, VCE = 5.0 V) IC/IF = f (IF) IC IF 103 102 100 10-1 101 2mA10055 IFisfh601_04 (TA = 0 °C, VCE = 5.0 V) IC/IF = f (IF) IC IF DC Pulsbetrieb Pulse

Document Number: 83663 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.3, 25-Jan-08 5 SFH601 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Fig. 5 - Current Transfer Ratio vs. Diode Current Fig. 6 - Current Transfer Ratio vs. Diode Current Fig. 7 - Current Transfer Ratio vs. Diode Current Fig. 8 - Current Transfer Ratio vs. Diode Current Fig. 9 - Transistor Characteristics Fig. 10 - Output Characteristics 103 102 100 10-1 101 2mA10055 IFisfh601_05 VCE = 5.0 V) IC/IF = f (IF) IC IF DC Pulsbetrieb Pulse 103 102 100 10-1 101 2mA10055 IFisfh601_06 TA = 50 °C, VCE = 5.0 V) IC/IF = f (IF) IC IF DC Pulsbetrieb Pulse 103 102 100 10-1 101 2mA10055 IFisfh601_07 TA = 75 °C, VCE = 5.0 V) IC/IF = f (IF) IC IF DC Pulsbetrieb Pulse 103 102 101 - 25 75 2505 0 ° C TAisfh601_08 (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) IC IF DC Pulsbetrieb Pulse mA 01 5 105V Ic VCEisfh601_09 IB = 10 µA IB = 20 µA IB = 40 µA IB = 30 µA IB = 2 µA IB = 5 µA IC = f (VCE) (IF = 0) DC Pulsbetrieb Pulse mA 01 5 105V Ic VCEisfh601_10 IF = ± 14 mA IF = ± 12 mA IF = ± 10 mA IF = ± 6 mA IF = ± 8 mA IF = ± 4 mA IF = ± 2 mA IF = ± 1 mA IC = f (VCE) DC Pulsbetrieb Pulse

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83663 6 Rev. 1.3, 25-Jan-08 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Fig. 11 - Forward Voltage Fig. 12 - Collector Emitter Off-state Current Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-1 Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-2 Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-3 Fig. 16 - Saturation Voltage vs. Collector Current and Modulation Depth SFH601-4 1.2 V 1.1 1.0 0.9 10-1 101 1025 mA55 100 VF IFisfh601_11 VF = f (IF) 25 °C 50 °C 75 °C 100 10-1 10-2 10-3 µA - 25 0 °C 25 50 75 100 ICEO TAisfh601_12 VCE = 40 V VCE = 10 V ICEO = f (V, T) (IF = 0) 1.0 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 101 102mA55 VCE sat ICisfh601_13 IF = 3 x IC VCEsat = f (IC) 1.0 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 101 102mA VCE sat ICisfh601_14 IF = 2 x IC IF = 3 x IC VCEsat = f (IC) 1.0 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10155 1 0 2mA VCE sat ICisfh601_15 IF = 2 x IC IF = 3 x IC IF = IC VCEsat = f (IC) 1.0 V 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10155 1 0 2mA VCE sat ICisfh601_16 IF = 2 x IC IF = 3 x IC IF = IC VCEsat = f (IC)

Document Number: 83663 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.3, 25-Jan-08 7 SFH601 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Fig. 17 - Permissible Pulse Load Fig. 18 - Permissible Power Dissipation for Transistor and Diode Fig. 19 - Permissible Forward Current Diode mA 101 102 103 104 10-5 10-4 10-3 10-2 10-1 100 101s IF tpiSFH601_17 tp IF TTD = tp D = 0 0.005 0.01 0.02 D = parameter, IF = f(tp) tp IF 0.05 0.1 0.2 0.5 DC mW 100 150 200 0 50 100 7525 °C P tot TAisfh601_18 Ptot = f (TA) Transistor Diode mA 120 0 50 100 7525 °C I F TAisfh601_19 IF = f (TA)

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83663 8 Rev. 1.3, 25-Jan-08 SFH601 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection PACKAGE DIMENSIONS in inches (millimeters) i178004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3.81) 0.031 (0.80) min. 0.300 (7.62) typ. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.018 (0.45) 0.022 (0.55) 0.048 0.022 (0.55) 0.248 (6.30) 0.256 (6.50) 0.335 (8.50) 0.343 (8.70) Pin one ID 654 123 18 ° 3° to 9° 0.300 to 0.347 (7.62 to 8.81) typ. ISO method A (0.45) min. 0.315 ( 8.00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.0098 (0.249) 15° max. Option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7.8) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) Option 6 0.315 (8.0) min. 0.300 (7.62) typ. 0.180 (4.6) 0.160 (4.1) 0.331 (8.4) min. 0.406 (10.3) max. 0.028(0.7) min. Option 7 18450

Document Number: 83663 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.3, 25-Jan-08 9 SFH601 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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