SFH600-0

SFH600 VISHAY

Document overview

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Technical content

Document Number: 83662 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 10-Jan-08 1 Optocoupler, Phototransistor Output, with Base Connection SFH600 Vishay Semiconductors

DESCRIPTION

The SFH600 is an optocoupler with a GaAs LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packaged in a plastic plug-in case, 20 AB DIN 41866. The coupler transmits signals between two electrically isolated circuits. The potential difference between the circuits to be coupled should not exceed the maximum permissible insulating voltage.

FEATURES

• Isolation test voltage (1.0 s), 5300 VRMS V CEsat = 0.25 (≤ 0.4) V, IF = 10 mA, IC = 2.5 mA  Built to conform to VDE requirements  High quality premium device  Long term stability  Storage temperature, - 55 °C to + 150 °C  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC AGENCY APPROVALS  UL1577, file no. E52744 system code H or J, double protection  DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending available with option 1  CSA 93751  BSI IEC 60950; IEC 60065 Note For additional information on the available options refer to option information. i179004 B C E A C NC ORDER INFORMATION PART REMARKS SFH600-0 CTR 40 to 80 %, DIP-6 SFH600-1 CTR 63 to 125 %, DIP-6 SFH600-2 CTR 100 to 200 %, DIP-6 SFH600-3 CTR 160 to 320 %, DIP-6 SFH600-0X007 CTR 40 to 80 %, SMD-6 (option 7) SFH600-1X007 CTR 63 to 125 %, SMD-6 (option 7) SFH600-1X009 CTR 63 to 125 %, SMD-6 (option 9) SFH600-2X006 CTR 100 to 200 %, DIP-6 400 mil (option 6) SFH600-2X007 CTR 100 to 200 %, SMD-6 (option 7) SFH600-3X006 CTR 160 to 320 %, DIP-6 400 mil (option 6) SFH600-3X007 CTR 160 to 320 %, SMD-6 (option 7) ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6.0 V DC forward current I F 60 mA Surge forward current t P ≤ 10 µs I FSM 2.5 A Total power dissipation P diss 100 mW OUTPUT Collector emitter voltage V CE 70 V Emitter base voltage V EB 7.0 V Collector current IC 50 mA t = 1.0 ms I C 100 mA Power dissipation P diss 150 mW

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83662 2 Rev. 1.5, 10-Jan-08 SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause per manent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requi rements. Typical values ar e characteristics of the device and are the result of eng ineering evaluation. Typical values are for information only and are not part of the testing requirements. COUPLER Isolation test voltage between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74 t = 1.0 s V ISO 5300 V RMS Creepage distance ≥ 7m m Clearance distance ≥ 7m m Isolation thickness between emitter and detector ≥ 0.4 mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 Isolation resistance VIO = 500 V, Tamb = 25 °C R IO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C R IO ≥ 1011 Ω Storage temperature range T stg - 55 to + 150 °C Ambient temperature range T amb - 55 to + 100 °C Junction temperature max . 10 s, dip soldering T j 100 °C Soldering temperature (2) max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm Tsld 260 °C

ELECTRICAL CHARACTERISTICS

MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 60 mA V F 1.25 1.65 V Breakdown voltage I R = 10 µA V BR 6.0 V Reverse current V R = 6.0 V I R 0.01 10 µA Capacitance V F = 0 V, f = 1 MHz C O 25 pF Thermal resistance R thja 750 K/W OUTPUT Collector emitter capacitance f = 1.0 mHz, V CE = 5.0 V C CE 5.2 pF Collector base capacitance f = 1.0 mHz, V CB = 5.0 V C CB 6.5 pF Emitter base capacitance f = 1.0 mHz, V EB = 5.0 V C EB 9.5 pF Thermal resistance R thja 500 K/W Collector emitter leakage current VCE = 10 V SFH600-0 I CEO 2.0 35 nA SFH600-1 I CEO 2.0 35 nA SFH600-2 I CEO 2.0 35 nA SFH600-3 I CEO 5.0 70 nA COUPLER Saturation voltage collector emitter voltage I F = 10 mA, IC = 2.5 mA V CEsat 0.25 0.4 V Capacitance (input to output) C IO 0.6 pF ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Document Number: 83662 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 10-Jan-08 3 SFH600 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT IC/IF at VCE = 5.0 V IF = 10 mA SFH600-0 CTR 40 80 % SFH600-1 CTR 63 125 % SFH600-2 CTR 100 200 % SFH600-3 CTR 160 320 % IF = 1.0 mA SFH600-0 CTR 13 30 % SFH600-1 CTR 22 45 % SFH600-2 CTR 34 70 % SFH600-3 CTR 56 90 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED Current V CC = 5.0 V, RL = 75 Ω IF 10 mA Rise time V CC = 5.0 V, RL = 75 Ω tr 2.0 µs Fall time V CC = 5.0 V, RL = 75 Ω tf 2.5 µs Turn-on time V CC = 5.0 V, RL = 75 Ω ton 3.2 µs Turn-off time V CC = 5.0 V, RL = 75 Ω toff 3.0 µs Cut-off frequency V CC = 5.0 V, RL = 75 Ω FCO 250 kHz SATURATED Current SFH600-0 I F 20 mA SFH600-1 I F 10 mA SFH600-2 I F 10 mA SFH600-3 I F 5.0 mA Rise time SFH600-0 t r 2.5 µs SFH600-1 t r 3.0 µs SFH600-2 t r 3.0 µs SFH600-3 t r 4.0 µs Fall time SFH600-0 t f 11 µs SFH600-1 t f 12 µs SFH600-2 t f 12 µs SFH600-3 t f 14 µs Turn-on time SFH600-0 t on 3.7 µs SFH600-1 t on 4.5 µs SFH600-2 t on 4.5 µs SFH600-3 t on 5.8 µs Turn-off time SFH600-0 t off 19 µs SFH600-1 t off 21 µs SFH600-2 t off 21 µs SFH600-3 t off 24 µs

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83662 4 Rev. 1.5, 10-Jan-08 SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Linear Operation (Without Saturation) Fig. 2 - Switching Operation (With Saturation) Fig. 3 - Current Transfer Ratio vs. Diode Current Fig. 4 - Current Transfer Ratio vs. Diode Current Fig. 5 - Current Transfer Ratio vs. Diode Current Fig. 6 - Current Transfer Ratio vs. Diode Current isfh600_01 R L = 75 Ω V CC = 5 V IC 47 Ω IF IF 1k Ω VCC =5 V 47 Ω isfh600_02 103 102 101 100 10-1 101 m A 10055 IFisfh600_03 (TA = - 25 ˚C, VCE = 5.0 V) IC/IF = f (IF) IC IF 103 102 101 100 10-1 101 m A 10055 IC IF IF isfh600_04 (TA = 0 ˚C, VCE = 5.0 V) IC/IF = f (IF) 103 102 101 100 10-1 101 m A 10055 IFisfh600_05 (VCE = 5.0 V) IC/IF = f (IF) IC IF 103 102 101 100 10-1 101 m A 10055 IFisfh600_06 (TA = 50 ˚C, IC/IF = f (IF) IC IF

Document Number: 83662 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 10-Jan-08 5 SFH600 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Fig. 7 - Current Transfer Ratio vs. Diode Current Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature Fig. 9 - Transistor Characteristics SFH600-2, -3 Fig. 10 - Output Characteristics SFH600-2, -3 Fig. 11 - Forward Voltage Fig. 12 - Collector Emitter Off-state Current 103 102 101 100 10-1 101mA10055 IFisfh600_07 (TA = 75 ˚C, VCE = 5.0 V) IC/IF = f (lF) DC Pulsbetrieb Pulse IC IF OHODO504 103 OHODO501 102 101 - 25 75 2505 0 ° C TAisfh600_08 (IF = 10 mA, VCE = 5.0 V) IC/IF = f (T) IC IF DC Pulsbetrieb Pulse mA 01 5 105V Ic VCEisfh600_09 IB = 10 µA IB = 15 µA IB = 20 µA IB = 40 µA IB = 30 µA IB = 2 µA IB = 5 µA (IC = f (VCE) IF = 0 DC Pulsbetrieb Pulse OHODO497 01 5 105 V Ic VCEisfh600_10 IF = 14 mA IF = 12 mA IF = 10 mA IF = 7 mA IF = 5 mA IF = 2 mA IF = 1 mA (IC = f (VCE) DC Pulsbetrieb Pulse OHODO498 1.2 V 1.1 1.0 0.9 10-1 101 1025 mA55 100 VF IFisfh600_11 VF = f (IF) 25 °C 50 °C 75 °C 100 10-1 10-2 10-3 µA 0° C 25 50 75 100 ICEO TAisfh600_12 VCE = 12 V VCE = 35 V ICEO = f (V,T) (IF = 0)

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83662 6 Rev. 1.5, 10-Jan-08 SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection Fig. 13 - Saturation Voltage vs. Collector Current and Modulation Depth SFH600-0 Fig. 14 - Saturation Voltage vs. Collector Current and Modulation Depth SFH600-1 Fig. 15 - Saturation Voltage vs. Collector Current and Modulation Depth SFH600-2 Fig. 16 - Saturation Voltage vs. Collector Current and Modulation Depth SFH600-3 Fig. 17 - Permissible Pulse Load Fig. 18 - Permissible Power Dissipation for Transistor and Diode 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 101 102 m A VCE sat ICisfh600_13 IF = 3 x IC VCEsat = f (IC) 1.0 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 101 102mA VCE sat ICisfh600_14 IF = 2 x IC IF = 3 x IC VCEsat = f (IC) 1.0 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 101 102 m A VCE sat ICisfh600_15 IF = 2 x IC IF = 3 x IC IF = IC VCEsat = f (IC) 1.0 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 101 102 m A VCE sat ICisfh600_16 IF = 2 x IC IF = 3 x IC IF = IC VCEsat = f (IC) 1.0 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 101 102 m A VCE sat ICisfh600_16 IF = 2 x IC IF = 3 x IC IF = IC VCEsat = f (IC) mW 100 150 200 0 50 100 7525 °C P tot TAisfh600_18 Ptot = f (TA) Transistor Diode

Document Number: 83662 For technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 1.5, 10-Jan-08 7 SFH600 Optocoupler, Phototransistor Output, with Base Connection Vishay Semiconductors Fig. 19 - Permissible Forward Current Diode Fig. 20 - Transistor Capacitance PACKAGE DIMENSIONS in inches (millimeters) mA 120 0 50 100 7525 °C I F TAisfh600_19 Ptot = f (TA) pF 10-2 10-1 100 101 102V C Veisfh600_20 C = f (VO) (f = 1.0 MHz) CEB CCB CCF i178004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3.81) 0.031 (0.80) min. 0.300 (7.62) typ. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.018 (0.45) 0.022 (0.55) 0.048 0.022 (0.55) 0.248 (6.30) 0.256 (6.50) 0.335 (8.50) 0.343 (8.70) Pin one ID 654 123 18 ° 3° to 9° 0.300 to 0.347 (7.62 to 8.81) typ. ISO method A (0.45) min. 0.315 ( 8.00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.0098 (0.249) 15° max. Option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7.8) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) Option 6 0.315 (8.0) min. 0.300 (7.62) typ. 0.180 (4.6) 0.160 (4.1) 0.331 (8.4) min. 0.406 (10.3) max. 0.028(0.7) min. Option 7 18450

www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83662 8 Rev. 1.5, 10-Jan-08 SFH600 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.