SFH331 SIEMENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Suitable for vapor-phase and IR-reflow soldering

Semiconductor Group 2 1997-11-01 SFH 331 Grenzwerte Maximum Ratings Bezeichnung

Description

Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 + 100 ˚C Durchlaßstrom (LED) Forward current (LED) IF 30 – mA Kollektorstrom (Transistor) Collector current (Transistor) IC –1 5 m A Stoßstrom Surge current t≤ 10 µs,D = 0.005 IFM 500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5–V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE –3 5 V Verlustleistung Total power dissipation Ptot 100 165 mW Wärmewiderstand Sperrschicht/Umgebung Thermal resistance junction/ambient Montage auf PC-Board* (Padgröße≥ 16 mm mounting on pcb* (pad size≥ 16 mm 2) Sperrschicht / Lötstelle junction / soldering joint Rth JA Rth JS 450 350 450 K/W K/W * PC-board: G30/FR4 Notes Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom Betriebszustand des anderen. The stated max. ratings refer to the specified chip regardless of the operating status of the other one.

Semiconductor Group 3 1997-11-01 SFH 331 Kennwerte LED (TA = 25 ˚C) Characteristics LED Bezeichnung Wellenlänge des emittierten Lichtes (typ.) Wavelength at peak emission (typ.) IF = 10 mA λpeak 635 nm Dominantwellenlänge (typ.) Dominant wavelength (typ.) IF = 10 mA λdom 628 nm Spektrale Bandbreite bei 50 %Irel max (typ.) Spectral bandwidth at 50 %Irel max (typ.) IF = 10 mA Δλ 45 nm Abstrahlwinkel bei 50 %IV (Vollwinkel) Viewing angle at 50 %IV 2ϕ 120 Grad degr. Durchlaßspannung (typ.) Forward voltage (max.) IF = 10 mA VF VF 2.0 2.6 V V Sperrstrom (typ.) Reverse current (max.) VR = 5 V IR IR 0.01 µA µA Kapazität (typ.) Capacitance VR = 0 V,f = 1 MHz C 0 12 pF Schaltzeiten: Switching times: IV from 10 % to 90 % (typ.) IV from 90 % to 10 % (typ.) IF = 100 mA,tp = 10µs,RL = 50Ω tr tf 300 150 ns ns Lichtstärke (Gruppe JK) (typ.) Luminous intensity (group JK) IF = 10 mA

Semiconductor Group 4 1997-11-01 SFH 331 Kennwerte Fototransistor(TA = 25oC, λ = 950 nm) Characteristics Phototransistor Bezeichnung Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 860 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% vonSmax Spectral range of sensitivity S = 10% ofSmax λ 380 ... 1150 nm Bestrahlungsempfindliche Fläche (∅ 240 µm) Radiant sensitive area(∅ 240 µm) A 0.045 mm 2 Abmessung der Chipfläche Dimensions of chip area L × B 0.45× 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseober- fläche Distance chip front to case surface Halbwinkel Half angle ϕ± 60 Grad degr. Kapazität Capacitance V CE = 0 V,f = 1 MHz,E = 0 C CE 5.0 pF Dunkelstrom Dark current V CE = 25 V,E = 0 ICEO 1 (≤ 200) nA Fotostrom Photocurrent E e = 0.1 mW/cm2,VCE = 5 V IPCE ≥ 16 µA Anstiegszeit/Abfallzeit Rise time/Fall time I C = 1 mA,VCC = 5 V,RL = 1 kΩ tr,tf 7 µs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = 5µA,Ee = 0.1 mW/cm2 VCEsat 150 mV

Semiconductor Group 5 1997-11-01 SFH 331 LED Radiation characteristicsIrel =f (ϕ) Phototransistor Directional characteristicsSrel= f (ϕ) LED Relative spectral emissionIrel= f (λ),TA = 25 ˚C,IF = 20 mA V (λ) =Standard eye response curve 0.2 0.4 1.0 0.8 0.6 ϕ 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ rel λ OHL02350 V λ 100 0400 450 500 550 600 650 700 nm Φ super-red

Semiconductor Group 6 1997-11-01 SFH 331 Forward currentIF =f (VF) TA = 25 ˚C Max. permissible forward current IF =f (TA) Forward currentVF = f (TA) IF = 10 mA Rel. luminous intensity IV /IV(10 mA) =f (IF),TA = 25 ˚C Wavelength at peak emission λpeak =f (TA),IF = 20 mA Rel. luminous intensity IV /IV(25 ˚C)= f (TA),IF = 10 mA Perm. pulse handling capabilityIF =f (tp) Duty cycle D = parameter,TA = 25 ˚C Dominant wavelengthλdom =f (TA) IF = 20 mA 10 -1 V super-red OHL02351 ΙF FV 010 110 210 mA OHL01661 ΙF 0 100604020 A 800 T mA green super-red orange yellow pure-green 1.4 OHL02106 VF AT 0 2 04 06 08 0 1 0 0 1.6 1.8 2.0 2.2 V 2.4 V V (10mA) 10 -1 0 10 10 12 10mA 10 -3 OHL02316 FΙ -210 -110 010 110 Ι Ι super-red green yellow orange super-red pure-green 550 OHL02104 λ peak AT 0 2 04 06 08 0 1 0 0 570 590 610 630 650 nm 690 yellow green orange super-red pure-green 0.0 OHL02150 AT 0 2 04 06 08 0 1 0 0 V VΙ Ι 0.4 0.8 1.2 1.6 2.0 (25 ˚C) OHL01686 s10-5 10-4 10-3 10-2 10-1 100 101 t D Ι T T P F tP= D = 0.005 0.01 0.02 0.05 0.2 0.5 DC 10 1 ΙF t 210 0.1 p 10 3 mA yellow green orange super-red pure-green 550 OHL02105 λ dom AT 0 2 04 06 08 0 1 0 0 570 590 610 630 650 nm 690

Semiconductor Group 7 1997-11-01 SFH 331 Phototransistor Rel. spectral sensitivitySrel= f (λ) Total power dissipation Ptot =f (TA) Dark current ICEO =f (TA),VCE = 5 V, E = 0 PhotocurrentIPCE = f (VCE ), Ee = Parameter Capacitance C CE = f (VCE ), f = 1 MHz,E = 0 PhotocurrentIPCE = f (Ee),VCE = 5 V Dark current ICEO =f (VCE ),E = 0 PhotocurrentIPCE /IPCE25 o =f (TA), VCE = 5 V λ OHF01121 relS 400 600 800 1000 1200 100 nm OHF00871 totP 120 160 mW 200 20 40 60 80 ˚C 100 TA T OHF01530 A CEOΙ -110 10 0 10 1 10 2 10 3 -25 nA 0 25 50 75 100˚C V OHF01529 CE PCEΙ 010 10 -2 10 -1 mA V5 10 15 20 25 30 35 mW cm 20.1 0.25 2cm mW 0.5 2cm mW 1 2cm mW V OHF01528 CE -210 CEC 10 -1 10 0 10 1 10 2 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 pF E OHF01924 e PCEΙ 10 -1 10 -3 10 -2 10 0 10 0 10 1 10 2 10 3 2mW/cm µ A V OHF01527 CE CEOΙ -310 10 -2 10 -1 10 0 10 1 0 5 10 15 20 25 30 35 V nA T OHF01524 A -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 ΙPCE PCEΙ 25 C