SFH3201 OSRAM

Document overview

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Technical content

Features

 Especially suitable for applications from 460 nm to 1080 nm  High linearity  SMT package without base connection, suitable for vapor phase, IR reflow soldering (JEDEC level 4) and wave soldering (JEDEC level 4)  Available only on tape and reel

Applications

 Ambient light detector  Photointerrupters  Industrial electronics  For control and drive circuits

Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40… + 100 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 20 V Kollektor-Emitterspannung, t< 120 s Collector-emitter voltage VCE 70 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, τ < 10 µs Collector surge current ICS 100 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7V Verlustleistung, TA = 25 °C Total power dissipation Ptot 120 mW Wärmewiderstand für Montage auf PC-Board Thermal resistance for mounting on pcb RthJA 500 K/W

Kennwerte (TA = 25 °C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λSm a x 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 460 … 1080 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.55 mm 2 Abmessung der Chipfläche Dimensions of chip area L × B L × W 1 × 1m m × mm Halbwinkel Half angle ϕ± 60 Grad deg. Kapazität, VCE = 0 V, f = 1 MHz, E =0 Capacitance C CE 15 pF Dunkelstrom Dark current VCE = 20 V, E =0 ICEO 3 (≤ 200) nA

Directional Characteristics Srel = f (ϕ) Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit -1 -2 -3 Fotostrom, λ = 950 nm Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V IPCE IPCE 63 … 125 1.65 100 … 200 2.6 160 … 320 4.2 µA mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 16 24 34 µs Kollektor-Emitter- Sättigungsspannung Collector-emitter saturation voltage IC = IPCEmin 1) × 0.3, Ee = 0.1 mW/cm2 VCEsat 170 (≤ 250) 170 (≤ 250) 170 (≤ 250) mV 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. OHF01402 40 30 20 10 20 40 60 80 100 1200.40.60.81.0 ϕ 0.2 0.4 0.6 0.8 1.0 100

TA =2 5°C, λ = 950 nm Rel. Spectral Sensitivity, Srel = f (λ) Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25°C Photocurrent IPCE = f (VCE ) λ OHF02332 relS 400 100 500 600 700 800 900 nm 1100 T OHF01524 A -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 ΙPCE PCEΙ 25 C V OHF00327 ce 01 0 20 30 40 50 60 70V mA pceΙ 1.0 mW/cm 0.5 1.0 1.5 2.0 2.5 3.0 20.5 mW/cm 0.25 mW/cm 2 0.1 mW/cm 2 Photocurrent IPCE = f (Ee), VCE = 5 V Dark Current ICEO = f (VCE ), E = 0 Collector-Emitter Capacitance C CE = f (VCE ), f = 1 MHz E OHF00326 e -310 pceΙ -410 10 1 mA 2mW/cm10 -2 10 0 10 -3 10 -2 10 -1 010 1 V OHF02341 CE CEOΙ -210 10 -1 10 0 10 1 10 2 nA 10 20 30 40 50 70 V V OHF02344 CE CEC 10 -2 -110 010 110 10 2V pF Total Power Dissipation Ptot = f (TA) Dark Current ICEO = f (TA), VCE = 10 V, E = 0 T OHF00309 A totP 0 20 40 60 80 C 100 mW 100 120 140 T OHF02342 A CEOΙ -110 10 0 10 1 10 2 10 3 nA 20 40 60 80 100 ˚C

Ma ßzeichnung Package Outlines Ma ße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 3.4 (0.134) 3.0 (0.118) 5.8 (0.228) 6.2 (0.244) 0.15 (0.006) 0.13 (0.005) 2.1 (0.083) 1.7 (0.067) GEOY6982 4.2 (0.165) 3.8 (0.150) - Emitter Collector 12 3 4 6 5 --- 0.3 (0.012) 0.5 (0.020) spacing spacing 0.4 (0.016) 0.7 (0.028) B A0.2 M A Active area 0.55 (0.022)

0.1 M B

2.54 (0.100) 1.27 (0.050)

Bitte Verarbeitungshinweise für SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. Löthinweise Soldering Conditions Bauform Type Drypack Level acc. to IPS-stand. 020 Tauch-, Schwalllötung Dip, Wave Soldering Reflowlötung Reflow Soldering Kolbenlötung Iron Soldering Peak Temp. (solderbath) Max. Time in Peak Zone Peak Temp. (package temp.) Max. Time in Peak Zone (Iron temp.) SFH 3201 4 260 10 s 245 °C1 0 s n . a .