SFH3162F OSRAM
Document overview
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Technical content
Features
Daylight Filter Dual Phototransistor positioned side by side Dual Phototransistor with common Collector Ideal combination with SFH4113 (horizontal encoder)
Applications
Direction detection Detector in photointerrupters Tape end detection Position sensing Barcode reader For control and drive circuits Coin counters
Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 85 °C Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s TS 260 °C Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Iron soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s TS 300 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 30 V Kollektorstrom Collector current IC 10 mA Kollektorspitzenstrom, t < 10 μs Collector surge current ICS 20 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 100 mW Wärmewiderstand Sperrschicht - Umgebung Thermal resistance junction - ambient RthJA 450 K/W
Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 920 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 780 … 1100 nm Abmessungen der Chip-Fläche Dimension of chip area L × B L × W 1.23 × 0.66 mm × mm Bestrahlungsempfindliche Fläche Radiant sensitive area A 2 x 0.15 mm2 Halbwinkel Half angle ϕ ± 75 Grad deg. Kapazität Capacitance VCE = 3V, f = 1 MHz, E = 0 CCE 3.2 pF Dunkelstrom Dark current VCE = 10 V ICEO 0.1 (≤ 100) nA Fotostrom Photocurrent Ee = 0.34 mW/cm2, VCE = 3.5 V Ie(on) 1) 185 .... 585 µA Temperaturkoeffizient von Ie(on) Temperature coefficient of Ie(on) Vce = 5 V TC + 0.9 %/K 1) Ice(on) ist der Mittelwert der Emitterströme der beiden Fototransistoren. Ice(on) is the mean value of the emitter currents of the two phototransistors.
Emitterstrom-Verhältnis der 2 Fototransistoren Emitter current ratio of the 2 phototransistors Veco = 3.5V, Ee = 0.34mW/cm² R1) 1 ... 1.1 Übersprechen zwischen T1 und T2 Crosstalk between T1 and T2 Ee = 0.34 mW/cm2, λ = 950nm, VCE = 3.5 V (Ie1-Ie1’)/Ie1 2) 3 % Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr tf μs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 50µA, Ee = 0.5 mW/cm2, λ = 950 nm VCEsat 0.1 (≤ 0.4) V 1) Ie(max)/ Ie(min) 2) Testing condition a) Ie1 measured while the emitter of T2 is grounded b) Ie1' is the Ie1 reading while the emitter of T2 is not connected
Relative Spectral Sensitivity Srel = f (λ) Total Power Dissipation Ptot = f (TA) OHF02373 0600 λ nm relS 100 700 800 900 1100 Photocurrent IPCE = f (Ee), VCE = 5 V Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 OHF02376 I PCE µA 0.2 0.4 0.6 1.2mW/cm20 200 400 600 800 1200 EE OHF02377 CEV -310 -210 -110 010 110 210V pF 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 CCE Photocurrent IPCE = f (VCE) OHF02375 I CEV PCE µA 101 210 310 5 10 15 20 25 30 V 0.5 mW/cm2 0.25 mW/cm2 0.1 mW/cm2
Maßzeichnung Package Outlines Maße in mm (inch) / Dimensions in mm (inch). 4.5 ±0.25 GEO06055 ±0.33.87 10.47 ±0.5 ±0.12.92.8 ±0.075 4.77 ±0.2 0.1 max. 0.1 max. 0.1 max. 0.1 max. 2.54 2.54 (0.5 x 45˚) (0.8 x 45˚) ±0.252.5 ±0.10.51.9 ±0.2 1±0.2 ±0.10.5 12 3 123 Pinout Chip Position T1 T2 1. Emitter T1 2. Common Collector 3. Emitter T2 Area not flat 0.5 ±0.1 1.5
Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802) Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserv ed. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of tr ansport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or system s must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered OHLY0598 50 100 150 200 250 100 150 200 250 300 T t C s 235 C 10 s C... 260 1. Welle 1. wave 2. Welle 2. wave
5 K/s 2 K/sca 200 K/s
CC... 130100
2 K/s
Zwangskühlung forced cooling Normalkurve standard curve Grenzkurven limit curves