SFH313 OSRAM

Document overview

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Technical content

Features

 Especially suitable for applications from 460 nm to 1080 nm (SFH 313) and of 880 nm (SFH 313 FA)  High linearity  5 mm plastic package

Applications

 Computer-controlled flashes  Photointerrupters  Industrial electronics  For control and drive circuits

SFH 313, SFH 313 FA Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 °C Kollektor-Emitterspannung Collector-emitter voltage VCE 70 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, τ < 10 μs Collector surge current ICS 100 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 200 mW Wärmewiderstand Thermal resistance RthJA 375 K/W

SFH 313, SFH 313 FA 2007-03-30 3 Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit SFH 313 SFH 313 FA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 870 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 460 … 1080 740 … 1080 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 0.55 0.55 mm2 Abmessungen der Chipfläche Dimensions of chip area L × B L × W 1 × 1 1 × 1 mm × mm Halbwinkel Half angle ϕ ± 10 ± 10 Grad deg. Kapazität, VCE = 5 V, f = 1 MHz, E = 0 Capacitance CCE 10 10 pF Dunkelstrom Dark current VCE = 20 V, E = 0 ICEO 3 (≤ 200) 3 (≤ 200) nA

SFH 313, SFH 313 FA Directional Characteristics Srel = f (ϕ) Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit -1 -2 -3 -4 Fotostrom, λ = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE 2.5 … 5 4 … 8 6.3 … 12.5 ≥ 10 mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 8 10 12 14 μs Kollektor-Emitter- Sättigungsspannung Collector-emitter saturation voltage IC = IPCEmin 1) × 0.3, Ee = 0.5 mW/cm2 VCEsat 150 150 150 150 mV 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. OHF02330 02 0 40 60 80 100 1200.40.60.81.0 100 010203040 0.2 0.4 0.6 0.8 1.0ϕ

SFH 313, SFH 313 FA 2007-03-30 5 TA = 25 °C, λ = 950 nm Relative Spectral Sensitivity, SFH 313 Srel = f (λ) Photocurrent IPCE = f (TA), VCE = 5 V, normalized to 25 °C Photocurrent IPCE = f (VCE), E = parameter λ OHF02332 relS 400 100 500 600 700 800 900 nm 1100 T OHF01524 A -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 Ι PCE PCEΙ 25 C V OHF02336 CE PCEΙ 010 0 10 20 30 40 50 V 70 10 1 mA 0.5 mW cm 2 2cm mW1 2cm mW0.25 0.1 mW cm 2 210 Relative Spectral Sensitivity, SFH 313 FA Srel = f (λ) Photocurrent IPCE = f (Ee), VCE = 5 V Dark Current ICEO = f (TA), VCE = 10 V, E = 0 λ OHF02331 relS 400 600 800 1000 1200 100 nm E OHF02337 e PCEΙ 10 0 -210 10 -1 110 mA 10 -3 -210 010mW/cm2 10 2 T OHF02342 A CEOΙ -110 10 0 10 1 10 2 10 3 nA 20 40 60 80 100 ˚C Dark Current ICEO = f (VCE), E = 0 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz Total Power Dissipation Ptot = f (TA) V OHF02341 CE CEOΙ -210 10 -1 10 0 10 1 10 2 nA 10 20 30 40 50 70 V OHF00349 CEC CEV 10-2 V pF -110 010 110 210 T OHF02340 A totP 0 20 40 60 80 ˚C 100 100 150 200 250 mW

SFH 313, SFH 313 FA Maßzeichnung Package Outlines Maße in mm (inch) / Dimensions in mm (inch). Cathode (Diode) GEXY6260Collector (Transistor) 5.7 (0.224) 5.1 (0.201) 1.8 (0.071) 1.2 (0.047) Chip position 5.9 (0.232) 5.5 (0.217) 0.6 (0.024) 0.4 (0.016) 0.6 (0.024) 0.4 (0.016) spacing 2.54 (0.100) 0.8 (0.031) 0.5 (0.020) 29 (1.142) 27 (1.063) 9.0 (0.354) 8.2 (0.323) 7.5 (0.295) 7.8 (0.307) Area not flat ø4.8 (0.189) ø5.1 (0.201)

SFH 313, SFH 313 FA 2007-03-30 7 Lötbedingungen Soldering Conditions Wellenlöten (TTW) (nach CECC 00802) TTW Soldering (acc. to CECC 00802) Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. Attention please!The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reser ved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of tr ansport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or system s must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. OHLY0598 50 100 150 200 250 100 150 200 250 300 T t C s 235 C 10 s C... 260 1. Welle 1. wave 2. Welle 2. wave

5 K/s 2 K/sca 200 K/s

CC... 130100

2 K/s

Zwangskühlung forced cooling Normalkurve standard curve Grenzkurven limit curves